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新疆理化技术研究所 [37]
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Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices
期刊论文
FRONTIERS IN MATERIALS, 2022, 卷号: 9
作者:
Lu, Guangbao
;
Liu, Jun
;
Zheng, Qirong
;
Li, Yonggang
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/12/23
total ionizing dose effect
dynamic modeling
doubly-hydrogenated oxygen vacancy
microscopic mechanism
MOS devices
Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9
作者:
Wu, P (Wu, Ping) [1] , [2]
;
Wen, L (Wen, Lin) [3] , [4]
;
Xu, ZQ (Xu, Zhi-Qian) [1] , [2]
;
Jiang, YS (Jiang, Yun-Sheng) [1] , [2]
;
Guo, Q (Guo, Qi) [3] , [4]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/04/07
Integrated circuit
Totalionizingdose
Electromagneticradiation
Synergistic effect
Combined environment
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Impact of High TID Irradiation on Stability of 65 nm SRAM Cells
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:
Cui, JW (Cui, Jiangwei) [1]
;
Zheng, QW (Zheng, Qiwen) [1]
;
Li, YD (Li, Yudong) [1]
;
Guo, Q (Guo, Qi) [1]
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/21
SRAM cells
Radiation effects
Arrays
Stability criteria
Circuit stability
Voltage measurement
Logic gates
Stability
static random-access memory (SRAM) cell
total ionizing dose (TID)
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
期刊论文
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:
Yang, GG (Yang, Guangan)[ 1 ]
;
Wu, WR (Wu, Wangran)[ 1 ]
;
Zhang, XY (Zhang, Xingyao)[ 2 ]
;
Tang, PY (Tang, Pengyu)[ 1 ]
;
Yang, J (Yang, Jing)[ 1 ]
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  |  
浏览/下载:30/0
  |  
提交时间:2021/03/15
SOI-LIGBT
Total-ionizing-dose
Radiation
Degradation
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
模拟数字转换器AD574总剂量和单粒子翻转的协合效应
期刊论文
辐射研究与辐射工艺学报, 2021, 卷号: 39, 期号: 4, 页码: 93-98
作者:
相传峰1,2,3
;
姚帅2,3,4
;
于新2,3
;
李小龙2,3
;
陆妩1,2,3
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/09/07
模拟数字转换器
总剂量效应
单粒子翻转
协合效应
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal
期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:
Li, YD (Li, Yudong)
;
Liu, BK (Liu, Bingkai)
;
Wen, L (Wen, Lin)
;
Wei, Y (Wei, Ying)
;
Zhou, D (Zhou, Dong)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/10/14
Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
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