×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
近代物理研究所 [74]
半导体研究所 [21]
高能物理研究所 [14]
上海光学精密机械研... [11]
新疆理化技术研究所 [10]
物理研究所 [8]
更多...
内容类型
期刊论文 [176]
会议论文 [21]
专利 [5]
学位论文 [4]
其他 [2]
发表日期
2021 [5]
2019 [8]
2018 [16]
2017 [8]
2016 [7]
2015 [12]
更多...
学科主题
半导体材料 [7]
半导体器件 [5]
Instrument... [2]
Physics [2]
半导体物理 [2]
Arsenic - ... [1]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共208条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Effects of different silicon content on irradiation defects and hardening in 9Cr ferritic/martensitic steel
期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2022, 卷号: 571
作者:
Chen, Yiheng
;
Long, Yunxiang
;
Luo, Hongtai
;
Xie, Ziyang
;
Lin, Wenbin
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/12/23
Ferritic
martensitic steel
Silicon content
Precipitate
Irradiation damage
Nanohardness
Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:
Cui, X (Cui, Xu) [1] , [2] , [3]
;
Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3]
;
Wei, Y (Wei, Ying) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/06/21
FinFET
1/f noise
TlD
CVS
bias dependence
A wide bandwidth real-time MEMS optical power meter with high resolution and linearity
期刊论文
Sensors and Actuators a-Physical, 2022, 卷号: 339, 页码: 6
作者:
X. Chen
;
H. R. Wang and X. Y. Wei
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2023/06/14
Phase stability of pre-irradiated CeO2 with swift heavy ions under high pressure up to 45 GPa
期刊论文
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2021, 页码: 14
作者:
Lan, Jianxiong
;
Zhai, Pengfei
;
Nan, Shuai
;
Xu, Lijun
;
Niu, Jingjing
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2022/01/12
CeO2
dislocation loops
high pressure
high-temperature annealing
swift heavy ions
Effect of irradiation of silicon photodiode arrays for ITER radial x-ray camera investigated by measuring response and current-voltage characteristics
期刊论文
REVIEW OF SCIENTIFIC INSTRUMENTS, 2021, 卷号: 92
作者:
Li, Chaozhi
;
Zhao, Jinlong
;
Cao, Hongrui
;
Hu, Liqun
;
Chen, Kaiyun
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2021/05/17
Influences of initial surface conditions on response characteristics of amorphous silicon films to nanosecond laser irradiation
期刊论文
Micromachines, 2021, 卷号: 12, 期号: 7
作者:
Y. Ren and Z. Zhang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2022/06/13
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10
作者:
Huang, Mingmin
;
Yang, Zhimei
;
Wang, Shaomin
;
Liu, Jiyuan
;
Gong, Min
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/12/15
Schottky barrier diodes
Raman spectroscopy
Recrystallization effect
Swift heavy ion
SiC
Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C
期刊论文
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2020, 卷号: 40, 期号: 4, 页码: 1014-1022
作者:
Li, Bingsheng
;
Liu, Huiping
;
Shen, Tielong
;
Xu, Lijun
;
Wang, Jie
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2022/01/18
3C-SiC
He irradiation
Microstructure
Stacking faults
High temperature
©版权所有 ©2017 CSpace - Powered by
CSpace