CORC

浏览/检索结果: 共8条,第1-8条 帮助

已选(0)清除 条数/页:   排序方式:
Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption 期刊论文
APPLIED OPTICS, 2018, 卷号: 57, 期号: 11, 页码: 2804-2808
作者:  Xiao, Longfei;  Yang, Xianglong;  Duan, Peng;  Xu, Huayong;  Chen, Xiufang
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/11
Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method 期刊论文
2016, 卷号: 22, 页码: 197-200
作者:  Mao, Kai-li;  Wang, Ying-min;  Wei, Ru-sheng;  Li, Bin;  Xu, Wei
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/20
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218
作者:  Dong, HW;  Zhao, YW;  Li, JM
收藏  |  浏览/下载:0/0  |  提交时间:2021/02/02
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218
作者:  Dong, HW;  Zhao, YW;  Li, JM
收藏  |  浏览/下载:0/0  |  提交时间:2021/02/02
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215
Dong, HW; Zhao, YW; Li, JM
收藏  |  浏览/下载:20/0  |  提交时间:2013/09/17
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW; Zhao YW; Li JM
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12
Dynamics of formation of defects in annealed InP 会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Han YJ; Liu XL; Jiao JH; Lin LY
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29
Formation mechanism of defects in annealed InP 会议论文
spie conference on optoelectronic materials and devices, taipei, taiwan, jul 09-11, 1998
Han YJ; Liu XL; Jiao JH; Lin LY
收藏  |  浏览/下载:8/0  |  提交时间:2010/10/29


©版权所有 ©2017 CSpace - Powered by CSpace