| Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method | |
| Mao, Kai-li; Wang, Ying-min; Wei, Ru-sheng; Li, Bin; Xu, Wei; Wang, Li-zhong | |
| 2016 | |
| 卷号 | 22页码:197-200 |
| 关键词 | high-purity semi-insulating 4H-SiC polytype stabilization sublimation method |
| ISSN号 | 1392-1320 |
| DOI | 10.5755/j01.ms.22.2.12914 |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000376366400009 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4982255 |
| 专题 | 西安理工大学 |
| 推荐引用方式 GB/T 7714 | Mao, Kai-li,Wang, Ying-min,Wei, Ru-sheng,et al. Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method[J],2016,22:197-200. |
| APA | Mao, Kai-li,Wang, Ying-min,Wei, Ru-sheng,Li, Bin,Xu, Wei,&Wang, Li-zhong.(2016).Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method.,22,197-200. |
| MLA | Mao, Kai-li,et al."Polytype Stabilization of High-purity Semi-insulating 4H-SiC Crystal via the PVT Method".22(2016):197-200. |
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