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北京大学 [6]
半导体研究所 [2]
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宁波材料技术与工程研... [1]
湖南大学 [1]
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期刊论文 [10]
其他 [1]
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The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors
期刊论文
SID Symposium Digest of Technical Papers, 2018, 卷号: Vol.49 No.1, 页码: 1239-1241
作者:
GongTan Li
;
Wei Wu
;
ShiMin Ge
;
Shan Li
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/26
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao
;
Zhou, Xiaoliang
;
Yang, Huan
;
He, Hongyu
;
Wang, Longyan
;
Zhang, Min
;
Zhang, Shengdong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Amorphous indium gallium zinc oxide (a-IGZO)
thin film transistors (TFTs)
back-channel-etch (BCE) process
Nb doped TiO2
THRESHOLD VOLTAGE
CARBON-NANOFILM
BARRIER LAYER
PERFORMANCE
SHIFT
Indium-Tin-Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation Layer
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Le, Yong
;
Shao, Yang
;
Xiao, Xiang
;
Xu, Xin
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
Indium tin oxide (ITO)
thin-film transistors (TFTs)
anodization
back channel passivation
STABILITY
CHANNEL
Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process
期刊论文
ieee electron device letters, 2015
Xiao, Xiang
;
Shao, Yang
;
He, Xin
;
Deng, Wei
;
Zhang, Letao
;
Zhang, Shengdong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/11
Amorphous indium gallium zinc oxide (a-IGZO)
thin-film transistors (TFTs)
back channel anodization (BCA)
low temperature
Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2015, 卷号: 7, 期号: 31, 页码: 17023-17031
Luo, Hao
;
Liang, Lingyan
;
Cao, Hongtao
;
Dai, Mingzhi
;
Lu, Yicheng
;
Wang, Mei
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2016/09/18
Reliability tests and improvements for Sc-contacted n-type carbon nanotube transistors
期刊论文
nano research, 2013
Liang, Shibo
;
Zhang, Zhiyong
;
Pei, Tian
;
Li, Ruoming
;
Li, Yan
;
Peng, Lianmao
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
stability
carbon nanotube
n-type field-effect transistor
passivation
reliability
FIELD-EFFECT TRANSISTORS
INTEGRATED-CIRCUITS
GATE DIELECTRICS
HIGH-PERFORMANCE
CMOS DEVICES
LOGIC GATES
SINGLE
ELECTRONICS
HYSTERESIS
GROWTH
Reliability Tests and Improvements on Sc-contacted n-type Carbon Nanotube Transistors
其他
2013-01-01
Shibo Liang
;
Zhiyong Zhang
;
Tian Pei
;
Lian-Mao Peng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Stability
Carbon Nanotube
n-type Field-Effect Transistor
Passivation
Reliability
Stability
Carbon Nanotube
n-type Field-Effect Transistor
Passivation
Reliability
Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics
期刊论文
NANO RESEARCH, 2012, 卷号: 5, 期号: 1, 页码: 33
Zeng, QS
;
Wang, S
;
Yang, LJ
;
Wang, ZX
;
Zhang, ZY
;
Peng, LM
;
Zhou, WY
;
Xie, SS
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/09/17
FIELD-EFFECT TRANSISTORS
BIPOLAR DIODE
SOLAR-CELLS
TRANSPARENT
CIRCUITS
GENERATION
NETWORKS
Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics
期刊论文
nano research, 2012
Zeng, Qingsheng
;
Wang, Sheng
;
Yang, Leijing
;
Wang, Zhenxing
;
Zhang, Zhiyong
;
Peng, Lianmao
;
Zhou, Weiya
;
Xie, Sishen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
Carbon nanotube
photovoltaic
diodes
thin film
doping-free
FIELD-EFFECT TRANSISTORS
BIPOLAR DIODE
SOLAR-CELLS
TRANSPARENT
CIRCUITS
GENERATION
NETWORKS
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure
期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:
Bi, Yang
;
Wang, XiaoLiang
;
Yang, CuiBai
;
Xiao, HongLing
;
Wang, CuiMei
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
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