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	The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors
	GongTan Li; Wei Wu; ShiMin Ge; Shan Li
刊名	SID Symposium Digest of Technical Papers
	2018
卷号	Vol.49 No.1页码:1239-1241
ISSN号	0097-966X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5460376
专题	湖南大学
推荐引用方式 GB/T 7714	GongTan Li,Wei Wu,ShiMin Ge,et al. The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors[J]. SID Symposium Digest of Technical Papers,2018,Vol.49 No.1:1239-1241.
APA	GongTan Li,Wei Wu,ShiMin Ge,&Shan Li.(2018).The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors.SID Symposium Digest of Technical Papers,Vol.49 No.1,1239-1241.
MLA	GongTan Li,et al."The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back-Channel-Etch Amorphous InGaZnO Thin-Film Transistors".SID Symposium Digest of Technical Papers Vol.49 No.1(2018):1239-1241.

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