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The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films
期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 106, 页码: 49-55
作者:
Feng, Dingshuai
;
Huang, Biaohong
;
Li, Lingli
;
Li, Xiaoqi
;
Gu, Youdi
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2022/07/01
Ferroelectric
Photovoltaic effect
BiFeO3
Eu3+ doping
Band gap
Phase-Transition-Induced VO2 Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021
作者:
Zhou, Xi
;
Zhao, Liang
;
Zhen, Weili
;
Lin, Yinyue
;
Wang, Chunlin
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2021/05/06
neuromorphic computing
optical neural networks
photodetectors
threshold switching
vanadium dioxide
Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:
Shih, Yu-Chuan
;
Lee, Ling
;
Liang, Kai-De
;
Manikandan, Arumugam
;
Liu, Wen-Wu
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2021/03/12
Copper
Copper oxides
Nanocrystalline materials
Nanowires
Oxide minerals
RRAM
Single crystals
Fabrication process
High current densities
Random access memory
Resistive switching
Resistive switching memory
Switching behaviors
Switching mechanism
Switching properties
Phase change material-based nano-cavity as an efficient optical modulator
期刊论文
Nanotechnology, 2021, 卷号: 32, 期号: 9
作者:
S. K. Chamoli
;
G. Verma
;
S. C. Singh and C. Guo
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  |  
浏览/下载:6/0
  |  
提交时间:2022/06/13
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
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  |  
浏览/下载:42/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Tunable Electromagnetically Induced Transparency-Like Spectrum in Lithium Niobate on Insulator Platform With Narrow Linewidth
期刊论文
IEEE PHOTONICS JOURNAL, 2020, 卷号: 12, 期号: 5
作者:
Yu, Wenqi
;
Dai, Shuangxing
;
Zhao, Yiru
;
Zhao, Qinfeng
;
Li, Jinye
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  |  
浏览/下载:43/0
  |  
提交时间:2020/11/09
Electromagnetically induced transparency (eit)
lithium niobate on insulator (lnoi)
A comprehensive investigation of MoO3 based resistive random access memory
期刊论文
RSC ADVANCES, 2020, 卷号: 10, 期号: 33, 页码: 19337-19345
作者:
Fatheema, Jameela
;
Shahid, Tauseef
;
Mohammad, Mohammad Ali
;
Islam, Amjad
;
Malik, Fouzia
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2020/12/16
SWITCHING CHARACTERISTICS
NONVOLATILE MEMORY
LOW-POWER
PERFORMANCE
MECHANISMS
SUBSTRATE
DEVICES
RRAM
Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O-3-PbTiO3 Single Crystals
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 9, 页码: 9548
作者:
Yan, Jian-Min
;
Xu, Zhi-Xue
;
Chen, Ting-Wei
;
Xu, Meng
;
Zhang, Chao
收藏
  |  
浏览/下载:79/0
  |  
提交时间:2019/12/26
ferroelectric field effect
ferroelectric single crystal
electronic properties
topological insulator thin films
magneto resistance
surface state
Possible strain induced Mott gap collapse in 1T-TaS2
期刊论文
COMMUNICATIONS PHYSICS, 2019, 卷号: 2
作者:
Bu, Kunliang
;
Zhang, Wenhao
;
Fei, Ying
;
Wu, Zongxiu
;
Zheng, Yuan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2021/09/06
Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour
期刊论文
Journal of Colloid and Interface Science, 2019, 卷号: 553, 页码: 682-687
作者:
B.Sun
;
T.Guo
;
G.D.Zhou
;
S.Ranjan
;
W.T.Hou
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2020/08/24
Resistive switching,Tunneling,Photon-generated carrier,Schottky,barrier,Memory device,wo3 nanoflakes,resistance,mechanism,device,Chemistry
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