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北京航空航天大学 [9]
宁波材料技术与工程研... [2]
兰州理工大学 [1]
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期刊论文 [10]
会议论文 [2]
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2020 [1]
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2018 [2]
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Dynamics of antiskyrmions induced by the voltage-controlled magnetic anisotropy gradient
期刊论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 卷号: 496
作者:
Qiu, Lei
;
Xia, Jing
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2020/12/16
ROOM-TEMPERATURE
SKYRMION
MOTION
DRIVEN
Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250
作者:
Cai, Hao
;
Wang, You
;
Naviner, Lirida Alves de Barros
;
Liu, Xinning
;
Shan, Weiwei
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/30
Fully depleted silicon-on-insulator (FDSOI)
magnetic tunnel junction (MTJ)
spin transfer torque magnetic random access memory (STT-MRAM)
voltage-controlled magnetic anisotropy (VCMA)
magnetoelectric random access memory (MeRAM)
aging
reliability
variability
Voltage-Controlled Magnetoelectric Memory Bit-cell Design With Assisted Body-bias in FD-SOI
会议论文
GLSVLSI '19 - PROCEEDINGS OF THE 2019 ON GREAT LAKES SYMPOSIUM ON VLSI, 2019-01-01
作者:
Cai, Hao
;
Han, Menglin
;
Shan, Weiwei
;
Yang, Jun
;
Wang, You
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/30
VCMA-MTJ
design boundary
voltage assisted techniques
ultra-low power
FD-SOI
Efficient Magnetic Domain Nucleation and Domain Wall Motion With Voltage Control Magnetic Anisotropy Effect and Antiferromagnetic/Ferromagnetic Coupling
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2019, 卷号: 55
作者:
Nan, Jiang
;
Zhang, Yue
;
Zhang, Zhizhong
;
Zhang, Kun
;
Zheng, Zhenyi
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
Antiferromagnetic (AFM) coupling
domain wall (DW) motion
magnetic domain nucleation
racetrack memory (RM)
voltage control magnetic anisotropy (VCMA)
Compact Model for Negative Capacitance Enhanced Spintronics Devices
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2795-2801
作者:
Gao, Tianqi
;
Zeng, Lang
;
Zhang, Deming
;
Zhang, Youguang
;
Wang, Kang L.
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/30
All spin logic (ASL) device
compact model
magnetic tunnel junction (MTJ)
negative capacitance (NC) effect
spin transfer torque (STT)
voltage-controlled magnetic anisotropy (VCMA)
Efficient skyrmion transport mediated by a voltage controlled magnetic anisotropy gradient
期刊论文
NANOSCALE, 2018, 卷号: 10, 期号: 2, 页码: 733-740
作者:
Wang, Xuan
;
Gan, W. L.
;
Martinez, J. C.
;
Tan, F. N.
;
Jalil, M. B. A.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/15
Propulsion
Refractory metal compounds
Gate electrodes
Over current
Packing density
Potential wells
Skyrmion dynamics
Skyrmions
Spin torque
Voltage-controlled
Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect
期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 页码: 492-499
作者:
Long, Mingzhi
;
Zeng, Lang
;
Gao, Tianqi
;
Zhang, Deming
;
Qin, Xiaowan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Magnetoelectric random access memory (MeRAM)
voltage controlled magnetic anisotropy (VCMA)
magnetic tunneling junction (MTJ)
write circuit
self-adaptive
Large voltage-controlled magnetic anisotropy in the SrTiO3/Fe/Cu structure
期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 111, 期号: 15, 页码: 152403
作者:
Peng, Shouzhong
;
Li, Sai
;
Kang, Wang
;
Zhou, Jiaqi
;
Lei, Na
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/12/25
Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications
期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2017, 卷号: 16, 页码: 387-395
作者:
Kang, Wang
;
Ran, Yi
;
Zhang, Youguang
;
Lv, Weifeng
;
Zhao, Weisheng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Magnetic tunnel junction (MTJ)
nonvolatile memory
spin transfer torque (STT)
voltage-controlled magnetic anisotropy (VCMA)
Stateful Reconfigurable Logic via a Single Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4295-4301
作者:
Zhang, He
;
Kang, Wang
;
Wang, Lezhi
;
Wang, Kang L.
;
Zhao, Weisheng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
In-memory logic (IML)
magnetic tunnel junction (MTJ)
spin Hall effect (SHE)
voltage-controlled magnetic anisotropy (VCMA)
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