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CORC

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Layer dependent direct tunneling behaviors through two dimensional titania nanosheets 期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2020, 卷号: 173, 页码: 5
作者:  Pu, Yayun;  Xie, Xiong;  Wang, Liang;  Shen, Jun
收藏  |  浏览/下载：47/0  |  提交时间：2020/08/24
Investigation on Charge-Carrier Transport Characteristics of Transformer Oil-based Nanofluids 期刊论文
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2018, 卷号: 25, 页码: 2443-2451
作者:  Li, Yang;  Dong, Ming;  Zhang, Chongxing;  Xie, Jiacheng;  Ren, Ming
收藏  |  浏览/下载：9/0  |  提交时间：2019/11/26
A Sequential Tunneling Model for Calculating Gate Leakage Current of Nanometer Metal-Oxide-Semiconductor Transistor 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 卷号: Vol.13 No.2, 页码: 240-244
作者:  Xu, YB;  Yang, HG
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/26
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
作者:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q.
收藏  |  浏览/下载：19/0  |  提交时间：2017/11/21
Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259
作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P.
收藏  |  浏览/下载：36/0  |  提交时间：2017/10/18
Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082
作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng
收藏  |  浏览/下载：22/0  |  提交时间：2017/11/21
Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358
作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong
收藏  |  浏览/下载：21/0  |  提交时间：2017/10/18
Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 卷号: 18, 期号: 9, 页码: 6509-6514
作者:  Zhou, Guangdong;  Wu, Bo;  Liu, Xiaoqin;  Li, Ping;  Zhang, Shuangju
收藏  |  浏览/下载：20/0  |  提交时间：2016/06/27
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors 期刊论文
应用物理学快报, 2013
Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/11
Fabrication of large area hexagonal boron nitride thin films for bendable capacitors 期刊论文
nano research, 2013
Guo, Ning; Wei, Jinquan; Jia, Yi; Sun, Huanhuan; Wang, Yuhang; Zhao, Kehan; Shi, Xiaolan; Zhang, Liuwan; Li, Xinming; Cao, Anyuan; Zhu, Hongwei; Wang, Kunlin; Wu, Dehai
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11

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