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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Online junction temperature estimation method for SiC modules with built-in NTC sensor 期刊论文 CPSS Transactions on Power Electronics and Applications, 2019, 卷号: Vol.4 No.1, 页码: 94-99 作者:  Ping Liu;  Changle Chen;  Xing Zhang;  Shoudao Huang 收藏  |  浏览/下载：102/0  |  提交时间：2019/12/13 Silicon carbide  Junctions  MOSFET  Temperature sensors  Impedance  Heating systems  Mathematical model  Boundary conditions  junction temperature  silicon carbide (SiC)  thermal model.   An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level 期刊论文 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018, 2018, 页码: 3383-3389 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Chen, Yufeng;  Zhang, Lei 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 equivalent model  series connected  SiC MOSFET   IGCT Circuit Model Based on Pspice Modeling Platform 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者:  Song, Yang;  Wang, Cailin;  Yang, Wuhan;  Yang, Jing 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/20 IGCT  SiC power MOSFET model  hard-driven  circuit model  Pspice modeling platfirm   An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level 会议论文 8th International Power Electronics Conference (IPEC-Niigata ECCE Asia), MAY 20-24, 2018 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Chen, Yufeng;  Zhang, Lei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 equivalent model  series connected  SiC MOSFET