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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:
Cheng, Wangping
;
Li, Chenhui
;
Zhou, Chen
;
He, Yuandi
;
Wei, Renhuai
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/12/23
Resistive random access memory
Resistive switching
Self-rectifying behavior
Copper chromium oxide
Thin film
Solution deposition
Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10
作者:
Huang, Biaohong
;
Xie, Zhongshuai
;
Feng, Dingshuai
;
Li, Lingli
;
Li, Xiaoqi
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  |  
浏览/下载:17/0
  |  
提交时间:2022/07/01
BiFeO3
current jump
domain wall creep
ferroelectric resistive switching
oxygen vacancy
space-charge-limited current
Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669
作者:
Wu, Bi
;
Wang, Chao
;
Wang, Zhaohao
;
Wang, Ying
;
Zhang, Deming
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  |  
浏览/下载:45/0
  |  
提交时间:2021/12/01
Random access memory
Magnetic tunneling
Switches
Reliability
Tunneling magnetoresistance
Metals
Transistors
SOT-MRAM
low power
high speed
high reliability
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M. J.
;
Tang, Y. L.
;
Wang, Y. J.
;
Zhu, Y. L.
;
Ma, J. Y.
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  |  
浏览/下载:26/0
  |  
提交时间:2021/02/02
Resistive switching behavior
Charged domain walls
Conductive filament mode
Transmission electron microscopy
Piezoresponse force microscopy
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M. J.
;
Tang, Y. L.
;
Wang, Y. J.
;
Zhu, Y. L.
;
Ma, J. Y.
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2021/02/02
Resistive switching behavior
Charged domain walls
Conductive filament mode
Transmission electron microscopy
Piezoresponse force microscopy
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
期刊论文
Acta Materialia, 2020, 卷号: 187, 页码: 12-18
作者:
Han, M.J.
;
Tang, Y.L.
;
Wang, Y.J.
;
Zhu, Y.L.
;
Ma, J.Y.
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  |  
浏览/下载:6/0
  |  
提交时间:2020/11/14
Bismuth compounds
Digital storage
Heterojunctions
High resolution transmission electron microscopy
Iron compounds
Scanning probe microscopy
Switching
Transmission electron microscopy
Tunnel junctions
Charged domain wall
Conductive filaments
Macroscopic and microscopic
Nonvolatile memory devices
Piezoresponse force microscopy
Resistance switching behaviors
Resistive switching behaviors
Technological applications
Sub-nanosecond memristor based on ferroelectric tunnel junction
期刊论文
NATURE COMMUNICATIONS, 2020, 卷号: 11
作者:
Ma, Chao
;
Luo, Zhen
;
Huang, Weichuan
;
Zhao, Letian
;
Chen, Qiaoling
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  |  
浏览/下载:31/0
  |  
提交时间:2020/11/26
Ultralow operation voltages of a transparent memristor based on bilayer ITO
期刊论文
APPLIED PHYSICS LETTERS, 2020, 卷号: 116, 期号: 22
作者:
Wang, Yuchen
;
Hu, Lingxiang
;
Wei, Xianhua
;
Zhuge, Fei
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  |  
浏览/下载:29/0
  |  
提交时间:2020/12/16
INDIUM-TIN-OXIDE
PLASTICITY
MECHANISMS
MEMORIES
Magnetism modulation and conductance quantization in a gadolinium oxide memristor
期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 卷号: 22, 期号: 45, 页码: 26322-26329
作者:
Xie, Zhuolin
;
Gao, Shuang
;
Ye, Xiaoyu
;
Yang, Huali
;
Gong, Guodong
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2020/12/16
MEMORIES
DEVICE
Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 45, 页码: 42358-42364
作者:
Yan, Shili
;
Huang, Hai
;
Xie, Zhijian
;
Ye, Guojun
;
Li, Xiao-Xi
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2021/02/02
black phosphorus
P(VDF-TrFE)
nonvolatile ferroelectric memories
field-effect transistors (FETs)
anti-hysteresis
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