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Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载：18/0  |  提交时间：2020/07/11
Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process 期刊论文
IEEE Electron Device Letters, 2018
作者:  Zhang QZ(张青竹);  Yin HX(殷华湘);  Meng LK(孟令款);  Yao JX(姚佳欣);  Li JJ(李俊杰)
收藏  |  浏览/下载：28/0  |  提交时间：2019/05/05
Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile 期刊论文
IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690
作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Chen, Chi-Cheng
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26
High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-k/Metal Gates 期刊论文
CHIN. PHYS. LETT., 2016
作者:  Mao SJ(毛淑娟);  Zhu ZY(朱正勇);  Wang GL(王桂磊);  Zhu HL(朱慧珑);  Li JF(李俊峰)
收藏  |  浏览/下载：13/0  |  提交时间：2017/05/09
沟道形状对无结型多栅器件性能影响探究 期刊论文
2016, 2016
胡梦月; 梁仁荣; 王敬; 许军; HU Mengyue; LIANG Renrong; WANG Jing; XU Jun
收藏  |  浏览/下载：6/0
Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 55, 期号: [db:dc_citation_issue]
作者:  Wei, Sufen;  Zhang, Guohe;  Shao, Zhibiao;  Huang, Huixiang;  Geng, Li
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02
Characterization of Self-heating Leads to Universal Scaling of HCI Degradation of Multi-Fin SOI FinFETs 其他
2016-01-01
Jiang, Hai; Shin, SangHoon; Liu, Xiaoyan; Zhang, Xing; Alam, Muhammad Ashraful
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
作者:  Zhao YY(赵玉印);  He XB(贺晓彬);  Gao JF(高建峰);  Xu Q(徐强);  Li JJ(李俊杰)
收藏  |  浏览/下载：17/0  |  提交时间：2016/05/31
Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm 期刊论文
应用物理学快报, 2014
Fu, Mengqi; Pan, Dong; Yang, Yingjun; Shi, Tuanwei; Zhang, Zhiyong; Zhao, Jianhua; Xu, H. Q.; Chen, Qing
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10
Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric 期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2014
Wei KangLiang; Egley, James; Liu XiaoYan; Du Gang
收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03

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