Remote charge scattering: a full Coulomb interaction approach and its   impact on silicon nMOS FinFETs with HfO2 gate dielectric

doi:10.1007/s11432-013-4810-0

CORC > 北京大学 > 信息科学技术学院

	Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric
	Wei KangLiang ; Egley, James ; Liu XiaoYan ; Du Gang
刊名	SCIENCE CHINA-INFORMATION SCIENCES
	2014
关键词	carrier transport full Coulomb interaction gate dielectric high-kappa Monte Carlo (MC) FinFET remote charge scattering (RCS) FIELD-EFFECT-TRANSISTORS MONTE-CARLO-SIMULATION OXIDE-SEMICONDUCTOR TRANSISTORS ELECTRON-MOBILITY LIMITED MOBILITY MOSFETS DEGRADATION STACKS
DOI	10.1007/s11432-013-4810-0
英文摘要	Remote charge scattering (RCS) has become a serious obstacle inhabiting the performance of ultrathin gate oxide MOSFETs. In this paper, we evaluate the impact of RCS by treating the real-space full Coulomb interaction between remote charges and inversion carriers. A new approach that can be simply incorporated in ensemble Monte Carlo (EMC) based simulations without any variation of the standard EMC simulator is developed. The charge-carrier (c-c) interaction model is based on a particle-mesh (PM) calculation method which resolves both the long-range and short-range Coulomb interactions by solving Poisson's equation on a refined mesh. The validity of our approach is verified by three-dimensional (3-D) resistor simulations, from which the obtained doping dependence of the low-field mobility agrees well with experimental results. The proposed approach is then used to study the impact of RCS on the drive current and carrier transport properties in the channel of a 20 nm silicon (Si) nMOS FinFET with HfO2 gate stack. We find that the influence of RCS is strongly localized in the vicinity of the remote charges and exhibits a granular nature, indicating the necessity to consider the full Coulomb interaction in RCS.; SCI(E); EI; ARTICLE; xyliu@ime.pku.edu.cn; 2; 1-9; 57
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/447058]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wei KangLiang,Egley, James,Liu XiaoYan,et al. Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric[J]. SCIENCE CHINA-INFORMATION SCIENCES,2014.
APA	Wei KangLiang,Egley, James,Liu XiaoYan,&Du Gang.(2014).Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric.SCIENCE CHINA-INFORMATION SCIENCES.
MLA	Wei KangLiang,et al."Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric".SCIENCE CHINA-INFORMATION SCIENCES (2014).