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CORC

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1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]
收藏  |  浏览/下载：21/0  |  提交时间：2022/04/07
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:  Ren, ZX (Ren, Zhexuan);  1An, X (An, Xia) 1;  Li, GS (Li, Gensong) 1;  Liu, JY (Liu, Jingyi) 1;  Xun, MZ (Xun, Mingzhu) 2
收藏  |  浏览/下载：34/0  |  提交时间：2021/09/22
High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: Vol.14
作者:  Liu, Huan;  Han, Genquan;  Liu, Yan;  Tang, Xiaosheng;  Yang, Jingchen
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/13
High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation 期刊论文
Nanoscale Research Letters, 2019, 卷号: Vol.14 No.1
作者:  Huan Liu;  Genquan Han;  Yan Liu;  Xiaosheng Tang;  Jingchen Yang
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/13
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
收藏  |  浏览/下载：29/0  |  提交时间：2020/03/20
Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler–Nordheim tunneling stress using the DCIV method 期刊论文
Applied Physics A, 2018
作者:  Wang RH(王瑞恒);  Ceng CB(曾传滨);  Li XJ(李晓静);  Han ZS(韩郑生);  Luo JJ(罗家俊)
收藏  |  浏览/下载：13/0  |  提交时间：2019/03/27
Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs 期刊论文
Microelectronic Engineering, 2017
作者:  Zhu HL(朱慧珑);  Xu QX(徐秋霞);  Li JF(李俊峰);  Zhao C(赵超);  Henry Homayoun Radamson
收藏  |  浏览/下载：47/0  |  提交时间：2018/07/09
pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology 期刊论文
Nanoscale Research Letters, 2017
作者:  Zhao C(赵超);  Wang GL(王桂磊);  Luo J(罗军);  Liu JB(刘金彪);  Yang T(杨涛)
收藏  |  浏览/下载：15/0  |  提交时间：2018/07/05
Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress 期刊论文
Nanoscale Research Letters, 2017
作者:  Niu JB(牛洁斌)
收藏  |  浏览/下载：5/0  |  提交时间：2018/07/13
Evaluation of Ballistic Transport in III-V-Based p-Channel MOSFETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017
Chang, Pengying; Liu, Xiaoyan; Di, Shaoyan; Du, Gang
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03

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