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Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 103, 期号: 12, 页码: 1-5
作者:  Li, P (Li, Pei)[ 1 ];  He, CH (He, ChaoHui)[ 1 ];  Guo, HX (Guo, HongXia)[ 2,3 ];  Zhang, JX (Zhang, JinXin)[ 4 ];  Li, YH (Li, YongHong)[ 1 ]
收藏  |  浏览/下载：35/0  |  提交时间：2020/01/10
AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 3, 页码: 1197-1201
作者:  Lian Zhang ;   Zhe Cheng;   Jianping Zeng ;   Hongxi Lu;   Lifang Jia;   Yujie Ai;   Yun Zhang
收藏  |  浏览/下载：6/0  |  提交时间：2020/07/31
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
收藏  |  浏览/下载：38/0  |  提交时间：2018/11/20
Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor 期刊论文
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology, 2017, 卷号: 51, 页码: 549-554
作者:  Ma, Ting;  Zhang, Jin-Xin;  He, Chao-Hui;  Tang, Du;  Li, Pei
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26
Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34
作者:  Li, Pei;  He, Chao-Hui;  Guo, Gang;  Guo, Hong-Xia;  Zhang, Feng-Qi
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26
Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26
作者:  Zhang, Jin-Xin;  He, Chao-Hui;  Guo, Hong-Xia;  Li, Pei;  Guo, Bao-Long
收藏  |  浏览/下载：1/0  |  提交时间：2019/11/26
Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier 期刊论文
2016, 2016
张为; 宋博; 付军; 王玉东; 崔杰; 李高庆; 张伟; 刘志宏; Zhang Wei; Song Bo; Fu Jun; Wang Yudong; Cui Jie; Li Gaoqing; Zhang Wei; Liu Zhihong
收藏  |  浏览/下载：7/0
Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation 期刊论文
2016, 2016
孙亚宾; 付军; 许军; 王玉东; 周卫; 张伟; 崔杰; 李高庆; 刘志弘; Sun Ya-Bin; Fu Jun; Xu Jun; Wang Yu-Dong; Zhou Wei; Zhang Wei; Cui Jie; Li Gao-Qing; Liu Zhi-Hong
收藏  |  浏览/下载：4/0
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao)
收藏  |  浏览/下载：19/0  |  提交时间：2017/09/14
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei)
收藏  |  浏览/下载：21/0  |  提交时间：2015/07/11

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