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	Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor
	Ma, Ting; Zhang, Jin-Xin; He, Chao-Hui; Tang, Du; Li, Pei
刊名	Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
	2017
卷号	51页码:549-554
关键词	Bias effects Different biases Dose-rate effects Reverse bias SiGe heterojunction bipolar transistor TCAD software Three-dimensional numerical simulations Transient current
ISSN号	1000-6931
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2924421
专题	西安交通大学
推荐引用方式 GB/T 7714	Ma, Ting,Zhang, Jin-Xin,He, Chao-Hui,et al. Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2017,51:549-554.
APA	Ma, Ting,Zhang, Jin-Xin,He, Chao-Hui,Tang, Du,&Li, Pei.(2017).Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,51,549-554.
MLA	Ma, Ting,et al."Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 51(2017):549-554.

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