CORC

在结果中检索

CORC

浏览/检索结果: 共16条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
一种含有高选择性腐蚀阻挡层的808nm半导体激光器 专利
专利号: CN106300012A, 申请日期: 2017-01-04, 公开日期: 2017-01-04
作者:  李沛旭;  徐现刚;  朱振;  张新;  苏建
收藏  |  浏览/下载：124/0  |  提交时间：2020/01/18
Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer 期刊论文
Journal of Semiconductors, 2015, 卷号: 36, 期号: 1
作者:  Zhu, Zhen;  Zhang, Xin;  Li, Peixu;  Wang, Gang;  Xu, Xiangang
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17
Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer 期刊论文
Journal of Semiconductors, 2015, 期号: 01, 页码: 109-111
作者:  Zhu Z(朱振);  Zhang X(张新);  Li PX(李沛旭);  Wang G(王钢);  Xu XG(徐现刚)
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/17
表面发射激光器元件、原子振荡器以及表面发射激光器元件的测试方法 专利
专利号: CN103460528A, 申请日期: 2013-12-18, 公开日期: 2013-12-18
作者:  佐藤俊一
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/31
一种TM偏振的GaAsP/GaInP有源区808nm量子阱激光器 专利
专利号: CN103457158A, 申请日期: 2013-12-18, 公开日期: 2013-12-18
作者:  李沛旭;  徐现刚;  张新;  蒋锴;  汤庆敏
收藏  |  浏览/下载：0/0  |  提交时间：2020/01/18
High power 808 nm laser diode with 62% wall-plug efficiency 期刊论文
Guangxue Xuebao/Acta Optica Sinica, 2011, 卷号: 31, 期号: SUPPL.1
作者:  Li, Peixu;  Jiang, Kai;  Zhang, Xin;  Tang, Qingmin;  Xia, Wei
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/23
Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars 期刊论文
Ieee Photonics Technology Letters, 2009, 卷号: 21, 期号: 14, 页码: 963-965
Wang Y.; Qin L.; Zhang Y.; Tian Z.; Yang Y.; Li Z. J.; Wang C.; Yao D.; Yin H. H.; Liu Y.; Wang L. J.
收藏  |  浏览/下载：15/0  |  提交时间：2012/10/21
Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition 期刊论文
Japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031
作者:  Zhong, Li;  Ma, Xaoyu
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.  
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition 期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L; Ma, XY
收藏  |  浏览/下载：55/0  |  提交时间：2010/03/08

©版权所有 ©2017 CSpace - Powered by CSpace