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| Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381 作者: Cai, Chang; Liu, Tianqi; Zhao, Peixiong; Fan, Xue; Huang, Hongyang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:25/0  |  提交时间:2022/01/19
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| SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell 期刊论文 MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 6 作者: Cai, C.; Zhao, P. X.; Xu, L. W.; Liu, T. Q.; Li, D. Q.
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:23/0  |  提交时间:2022/01/19
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| Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250 作者: Cai, Hao; Wang, You; Naviner, Lirida Alves de Barros; Liu, Xinning; Shan, Weiwei
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:7/0  |  提交时间:2019/12/30
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| The total ionizing dose response of leading-edge FDSOI MOSFETs 会议论文 作者: Wang J(王剑); Li BH(李彬鸿); Huang Y(黄杨); K.Zhao; F.Yu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:25/0  |  提交时间:2019/05/13 |
| Characteristics of Single Event Upsets induced by Heavy Ions in 28nm UTBB-FDSOI SRAM with Several Types of Radiation Harden Bit-cells 会议论文 作者: Bo Mei ; Qingkui Yu; Yong Ge; Yi Sun; Hongwei Zhang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2019/05/10 |
| Total Ionizing Dose Characterization of a SRAM in 28nm UTBB FDSOI Technology 会议论文 作者: Qiwen Zheng; mengxin Liu; Jiangwei Cui; Shanxue Xi; Ying Wei
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:33/0  |  提交时间:2019/05/10 |
| The total ionizing dose response of leading-edge FDSOI MOSFETs 期刊论文 Microelectronics Reliability, 2018 作者: Li BH(李彬鸿); Gao JT(高见头); Cai XW(蔡小五); Cui Y(崔岩); Wang J(王剑)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:17/0  |  提交时间:2019/03/29 |
| Thermal Characteristics of ESD Diode in FDSOI Technologies 会议论文 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018, Shenzhen, China, 2018-06-06 作者: Yang, Zhaonian; Yu, Ningmei; Liou, Juin J.
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:3/0  |  提交时间:2019/12/20 |
| Electromagnetic susceptibility characterization of double SOI device 期刊论文 Microelectronics Reliability, 2016 作者: Luo JJ(罗家俊); Li BH(李彬鸿); Gao JT(高见头)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2017/05/08 |
| FDSOI器件中超薄BOX对性能和短沟道效应的影响 学位论文 : 中国科学院大学, 2016 作者: 谭思昊
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:10/0  |  提交时间:2017/08/29 |