SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell

doi:10.1016/j.microrel.2019.06.014

	SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell
	Cai, C.2,3; Zhao, P. X.2,3; Xu, L. W.1; Liu, T. Q.2; Li, D. Q.2,3; Ke, L. Y.2,3; He, Z.2,3; Liu, J.2
刊名	MICROELECTRONICS RELIABILITY
	2019-09-01
卷号	100 页码:6
关键词	UTBB FDSOI Radiation hardened 8T SRAM Single event upset
ISSN号	0026-2714
DOI	10.1016/j.microrel.2019.06.014
通讯作者	Liu, T. Q.(liutianqi@impcas.ac.cn) ; Liu, J.(j.liu@impcas.ac.cn)
英文摘要	FDSOI technology has attracted considerable interests in space application due to its inherent high radiation resistance. An SEU hardened 8T SRAM cell is proposed and implemented in a test memory chip with advanced 22 nm UTBB FDSOI technology. Heavy ion experimental results show that the threshold LET of SEU for proposed 8T structure cell is up to similar to 24 MeV center dot cm(2)center dot mg(-1) and less dependences of upset on data pattern and test modes are observed. Moreover, multiple bit upsets are not appeared in bitmap analysis results even under effective LET values at similar to 129 MeV center dot cm(2)center dot mg(-1). The P-bb body biasing shows low influence on SEU rates in irradiation test, while the N-bb body biasing has ability to adjust the SEU sensitivity in a certain range. The error rate prediction indicates that this nanoscale FDSOI hardened SRAM is suitable for space application in harsh radiation environment.
资助项目	National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11675233]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000503907900146
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/141414]
专题	中国科学院近代物理研究所
通讯作者	Liu, T. Q.; Liu, J.
作者单位	1.Fudan Univ, State Key Lab ASIC & Syst, Shanghai, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Cai, C.,Zhao, P. X.,Xu, L. W.,et al. SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell[J]. MICROELECTRONICS RELIABILITY,2019,100:6.
APA	Cai, C..,Zhao, P. X..,Xu, L. W..,Liu, T. Q..,Li, D. Q..,...&Liu, J..(2019).SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell.MICROELECTRONICS RELIABILITY,100,6.
MLA	Cai, C.,et al."SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell".MICROELECTRONICS RELIABILITY 100(2019):6.