CORC

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CORC

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Deeply Supervised Depth Map Super-Resolution as Novel View Synthesis 期刊论文
IEEE Transactions on Circuits and Systems for Video Technology, 2018
作者:  Song X.;  Dai Y.;  Qin X.
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-based HEMTs with Good DC and RF Performances 期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017
作者:  Chen C(陈晨);  Ding P(丁芃);  Niu JB(牛洁斌);  Yang F(杨枫);  Ding WC(丁武昌)
收藏  |  浏览/下载：13/0  |  提交时间：2018/05/15
AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 卷号: 62, 期号: [db:dc_citation_issue]
作者:  Zhang, Lu;  Wang, Xiaoliang;  Xiao, Hongling;  Chen, Hong;  Feng, Chun
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/03
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure 期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 5
作者:  Bi, Y.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Peng, E. C.
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：37/0  |  提交时间：2012/01/06
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/09
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/09
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 12, 页码: 3543-3546
Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC
收藏  |  浏览/下载：44/1  |  提交时间：2010/03/08

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