QQ客服 官方微博 反馈留言

	The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure
	Bi, Y.1; Wang, X. L.1,2; Xiao, H. L.1,2; Wang, C. M.1,2; Peng, E. C.1; Lin, D. F.1; Feng, C.1,2; Jiang, L. J.1,2
刊名	European physical journal-applied physics
	2011-07-01
卷号	55期号:1页码:5
ISSN号	1286-0042
DOI	10.1051/epjap/2011110184
通讯作者	Bi, y.(ybi@semi.ac.cn)
英文摘要	This is a theoretical study of the ingan back-barrier on the properties of the al0.3ga0.7n/aln/gan/ingan/gan hemt structure by self-consistently solving coupled schrodinger and poisson equations. our calculation shows that by increasing the indium composition, the conduction band of the gan buffer layer is raised and the confinement of 2deg is improved. however, the additional quantum well formed by ingan becomes deeper, inducing and confining more electrons in it. another conductive channel is formed which may impair the device performance. with the increasing ingan thickness, the well depth remains the same and the conduction band of gan buffer layer rises, enhancing the confinement of the 2deg without inducing more electrons in the well. the 2deg sheet density decreases slightly with the indium composition and the physical mechanism is discussed. low indium composition and thick ingan back-barrier layer are beneficial to mitigate the short-channel effects, especially for high-frequency devices.
WOS关键词	ALGAN/GAN/INGAN/GAN DH-HEMTS ; FIELD-EFFECT TRANSISTORS ; ALGAN/GAN ; POLARIZATION ; PASSIVATION ; HFETS ; GHZ
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	CAMBRIDGE UNIV PRESS
WOS记录号	WOS:000292960600002
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428207
专题	半导体研究所
通讯作者	Bi, Y.
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Bi, Y.,Wang, X. L.,Xiao, H. L.,et al. The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure[J]. European physical journal-applied physics,2011,55(1):5.
APA	Bi, Y..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Peng, E. C..,...&Jiang, L. J..(2011).The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure.European physical journal-applied physics,55(1),5.
MLA	Bi, Y.,et al."The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure".European physical journal-applied physics 55.1(2011):5.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。