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浏览/检索结果: 共11条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Performance investigation of p-type Ge- and Ge-Core/Si-Shell junctionless nanowire transistors 其他 2014-01-01 Xu, Hao; Sun, Lei; Zhang, Yi-Bo; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Performance Investigation on p-Type Si-, Ge-, and Ge-Si Core-Shell Nanowire Schottky Barrier Transistors 其他 2011-01-01 Pu, Jing; Sun, Lei; Han, Ru-Qi 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 FIELD-EFFECT TRANSISTORS  GATE  MOSFETS  S/D   Performance investigation on p-type Si-, Ge-, and Ge-Si core-shell nanowire schottky barrier transistors 期刊论文 Japanese Journal of Applied Physics, 2011 Pu, Jing; Sun, Lei; Han, Ru-Qi 收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03 Modeling and simulation of a hybrid fuel cell system and energy management strategy 期刊论文 2010, 2010 Xu Liangfei; Lu Languang; Li Jianqiu; Ouyang Minggao 收藏  |  浏览/下载：5/0 燃料电池混合动力系统建模及能量管理算法仿真 期刊论文 2010, 2010 徐梁飞; 卢兰光; 李建秋; 欧阳明高; XU Liangfei; LU Languang; LI Jianqiu; OUYANG Minggao 收藏  |  浏览/下载：2/0 Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo 会议论文 作者:  Li, Zun-Chao;  Xu, Jin-Peng;  Liu, Lin-Lin 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/10 Current continuity  Current drivability  Current modeling  Drain current models  Dual material gate  Dual materials  Hot carrier reliability  Surrounding gate MOSFETs   Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels 期刊论文 IEICE Transactions on Electronics, 2010, 卷号: E93-C No.11, 页码: 1638-1644 作者:  Ito, Takashi;  Zhu, Xiaoli;  Kuroki, Shin-Ichiro;  Kotani, Koji 收藏  |  浏览/下载：3/0  |  提交时间：2020/01/13 nanograting  current drive  effective mobility  reliability  TDDB  NBTI   Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors 期刊论文 ieee电子器件汇刊, 2009 Yu, Shimeng; Zhao, Yuning; Zeng, Lang; Du, Gang; Kang, Jinfeng; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 FinFETs  line-edge roughness (LER)  parameter fluctuations  process variations  Schottky-barrier field-effect transistors (SBFETs)  SRAM stability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  YTTERBIUM SILICIDE  SRAM CELLS  MOSFETS  SOURCE/DRAIN  SIMULATION  DEVICES  DECANANOMETER  STABILITY   A Comprehensive Study on Schottky Barrier Nanowire Transistors (SB-NWTs): Principle, Physical Limits and Parameter Fluctuations 其他 2008-01-01 Zhang, Liangliang; Kang, Zhaoyi; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 FIELD-EFFECT TRANSISTORS  PERFORMANCE  SOURCE/DRAIN  MOSFETS   Impact of gate overlap on performance of schottky barrier metal-oxide-semiconductor field-effect transistors including gate induced barrier lowering effect 期刊论文 Japanese Journal of Applied Physics, 2008 Zeng, Lang; Liu, Xiao-Yan; Du, Gang; Kang, Jin-Feng; Han, Ru-Qi 收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03