| Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo | |
| Li, Zun-Chao; Xu, Jin-Peng; Liu, Lin-Lin | |
| 2010 | |
| 关键词 | Current continuity Current drivability Current modeling Drain current models Dual material gate Dual materials Hot carrier reliability Surrounding gate MOSFETs |
| 期号 | [db:dc_citation_issue] |
| DOI | [db:dc_identifier_doi] |
| 页码 | 1904-1906 |
| 会议录 | ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
 |
| URL标识 | 查看原文 |
| ISSN号 | 9781424457984 |
| WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4502776 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Li, Zun-Chao,Xu, Jin-Peng,Liu, Lin-Lin. Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo[C]. 见:. |
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