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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文 ieee electron device letters, 2014 Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Post-gate annealing (PGA)  GaN  enhancement mode  MOSFET  ON/OFF current ratio  mesa isolation current  GAN MIS-HEMTS  AL2O3/GAN MOSFET  INTERFACE   Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer 期刊论文 ieee electron device letters, 2014 Liu, Shenghou; Yang, Shu; Tang, Zhikai; Jiang, Qimeng; Liu, Cheng; Wang, Maojun; Chen, Kevin J. 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/16 Al2O3/AlN/GaN  interfacial layer  normally off  MOS-channel-HEMT  recess  AL2O3/GAN MOSFET  PERFORMANCE   300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio 期刊论文 electronics letters, 2014 Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 CIRCUITS  HEMTS   Normally-Off Hybrid Al2O3/GaN MOSFET on Silicon Substrate Based on Wet-Etching 其他 2014-01-01 Wang, Maojun; Wang, Ye; Zhang, Chuan; Wen, Cheng P.; Wang, Jinyan; Hao, Yilong; Wu, Wengang; Shen, Bo; Chen, Kevin J. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 PERFORMANCE  SI   Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1200-1202 作者:  Cai, Y (蔡勇) 收藏  |  浏览/下载：34/0  |  提交时间：2015/02/03 Post-gate annealing (PGA)  GaN  enhancement mode  MOSFET  ON/OFF current ratio  mesa isolation current   Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique 期刊论文 ieee electron device letters, 2013 Xu, Zhe; Wang, Jinyan; Liu, Yang; Cai, Jinbao; Liu, Jingqian; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 AlGaN/GaN MOSFET  gate recess  normally off  self-terminating  ENHANCEMENT-MODE  HEMTS  OXIDATION  GAN