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浏览/检索结果: 共1条，第1-1条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：115/47  |  提交时间：2010/03/17 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA  output light power of 4.5 mW  and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover  over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device  10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.