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CORC

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Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS 会议论文
作者:  Kang XW(康玄武);  Huang S(黄森);  Wei K(魏珂);  Wang XH(王鑫华);  Zhang JH(章晋汉)
收藏  |  浏览/下载：12/0  |  提交时间：2018/07/20
Influence of mg content on molecular-beam-epitaxy-grown znmgs ultraviolet photodetectors 期刊论文
Journal of crystal growth, 2004, 卷号: 265, 期号: 1-2, 页码: 28-33
作者:  Lu, LW;  Sou, IK;  Ge, WK
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors 期刊论文
journal of crystal growth, 2004, 卷号: 265, 期号: 1-2, 页码: 28-33
Lu, LW; Sou, IK; Ge, WK
收藏  |  浏览/下载：327/94  |  提交时间：2010/03/09
Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文
Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
作者:  Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Electron ground state energy level determination of znse self-organized quantum dots embedded in zns 期刊论文
Journal of applied physics, 2003, 卷号: 93, 期号: 9, 页码: 5325-5330
作者:  Lu, LW;  Yang, CL;  Wang, J;  Sou, IK;  Ge, WK
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS 期刊论文
journal of applied physics, 2003, 卷号: 93, 期号: 9, 页码: 5325-5330
Lu LW; Yang CL; Wang J; Sou IK; Ge WK
收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525
Leung, BH; Fong, WK; Surya, C; Lu, LW; Ge, WK
收藏  |  浏览/下载：343/96  |  提交时间：2010/03/09
GaN  
Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
作者:  Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12

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