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Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 82, 期号: 11
Zhang, WX; Delerue, C; Niquet, YM; Allan, G; Wang, EG
收藏  |  浏览/下载:12/0  |  提交时间:2013/09/17
Finite-element study of strain field in strained-Si MOSFET 期刊论文
MICRON, 2009, 卷号: 40, 期号: 2, 页码: 274
Liu, HH; Duan, XF; Xu, QX
收藏  |  浏览/下载:16/0  |  提交时间:2013/09/17
Study of strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction 期刊论文
ULTRAMICROSCOPY, 2008, 卷号: 108, 期号: 9, 页码: 816
Liu, HH; Duan, XF; Xu, QX; Liu, BG
收藏  |  浏览/下载:16/0  |  提交时间:2013/09/24
Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 26
Liu, HH; Duan, XF; Qi, XY; Xu, QX; Li, HO; Qian, H
收藏  |  浏览/下载:10/0  |  提交时间:2013/09/24


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