Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

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	Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires
	Zhang, WX ; Delerue, C ; Niquet, YM ; Allan, G ; Wang, EG
刊名	PHYSICAL REVIEW B
	2010
卷号	82 期号:11
关键词	FIELD-EFFECT TRANSISTORS CARRIER MOBILITY ENHANCEMENT GATE PERFORMANCE SI
ISSN号	1098-0121
通讯作者	Zhang, WX: IEMN, Dept ISEN, 41 Blvd Vauban, F-59046 Lille, France.
中文摘要	Using a sp(3)d(5)s* tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is calculated and its dependence on the temperature, density of electrons, and size of the nanowires is investigated. We predict that, as a result of strong quantum confinement, (1) electrons couple to a wide and complex distribution of phonon modes and (2) the mobility has a nonmonotonic variation with wire diameter and is strongly reduced with respect to the bulk.
收录类别	SCI
资助信息	French Embassy in China; French National Research Agency (ANR) [ANR-07-NANO-023-02]; Delegation Generale pour l'Armement, French Ministry of Defense [2008.34.0031]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34059]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, WX,Delerue, C,Niquet, YM,et al. Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires[J]. PHYSICAL REVIEW B,2010,82(11).
APA	Zhang, WX,Delerue, C,Niquet, YM,Allan, G,&Wang, EG.(2010).Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires.PHYSICAL REVIEW B,82(11).
MLA	Zhang, WX,et al."Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires".PHYSICAL REVIEW B 82.11(2010).