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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Wang, Cuicui; Hu, Zhijin; He, Xin; Liao, Congwei; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 Active-matrix organic light-emitting diode (AMOLED)  compensated pixel circuit  diode-connected structure  dual-gate (DG) amorphous indium-gallium-zinc-oxide thin-film transistor (a-IGZO TFT)  ELECTRICAL INSTABILITY  AMOLED DISPLAYS  VOLTAGE  BIAS  SI   Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Hu, Zhijin; Wang, Lisa Ling; Liao, Congwei; Zeng, Limei; Lee, Chang-Yeh; Lien, Alan; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Amorphous silicon  bipolar pulse bias stress (BPBS)  thin-film transistor (TFT)  threshold voltage shift (Delta V-TH)  unipolar pulse bias stress (UPBS)  THIN-FILM TRANSISTORS  HYDROGENATED AMORPHOUS-SILICON  INSTABILITY MECHANISMS  ELECTRIC-FIELDS  CONDUCTION  NITRIDE  STRESS  DEPENDENCE  MODEL   Effect of O-2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced V-th Shift of a-IGZO TFTs 期刊论文 ieee电子器件汇刊, 2013 Xiao, Xiang; Deng, Wei; Chi, Shipeng; Shao, Yang; He, Xin; Wang, Longyan; Zhang, Shengdong 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/11 Amorphous indium-gallium-zinc-oxide (a-IGZO)  donor-like states  instability  O-2 flow rate  thin film transistors (TFTs)  FILM TRANSISTORS  MOBILITY  VOLTAGE   Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress 期刊论文 ieee电子器件汇刊, 2011 Zhou, Dapeng; Wang, Mingxiang; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/12 Amorphous silicon (a-Si)  gate bias stress  thin-film transistors (TFTs)  THRESHOLD VOLTAGE SHIFT  INSTABILITY MECHANISMS  MODEL