Degradation of Amorphous Silicon Thin Film Transistors Under Negative   Gate Bias Stress

doi:10.1109/TED.2011.2161635

CORC > 北京大学 > 信息科学技术学院

	Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress
	Zhou, Dapeng ; Wang, Mingxiang ; Zhang, Shengdong
刊名	ieee电子器件汇刊
	2011
关键词	Amorphous silicon (a-Si) gate bias stress thin-film transistors (TFTs) THRESHOLD VOLTAGE SHIFT INSTABILITY MECHANISMS MODEL
DOI	10.1109/TED.2011.2161635
英文摘要	Degradation of amorphous silicon thin-film transistors under negative gate bias stresses is systematically investigated. It is found that both state creation and hole trapping contribute to device threshold voltage V(th) shifts. For direct-current stresses, state creation dominates in low-stress amplitude conditions, whereas hole trapping could dominate the second-stage degradation in high-stress amplitude conditions. For alternating-current stresses, it is found that domination of state creation or hole trapping mechanisms depends on stress frequency f, temperature, amplitude, and stress time. As a result, different turnaround phenomena of V(th) degradation are observed. Both state creation and hole trapping mechanisms are enhanced by higher stress temperatures and amplitudes. Based on an RC delaymodel, both f- and duty-ratio-dependent degradation under low-f stress conditions can be understood, whereas a recovery phenomenon under high-f stress conditions can be explained by the hole trapping/emission mechanism. Device leakage current I(off) decreases under low-f stress but increases under high-f stress. State creation is considered responsible for the I(off) reduction, whereas hole injection is considered responsible for the I(off) increase.; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 0; ARTICLE; 10; 3422-3427; 58
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/238206]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhou, Dapeng,Wang, Mingxiang,Zhang, Shengdong. Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress[J]. ieee电子器件汇刊,2011.
APA	Zhou, Dapeng,Wang, Mingxiang,&Zhang, Shengdong.(2011).Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress.ieee电子器件汇刊.
MLA	Zhou, Dapeng,et al."Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress".ieee电子器件汇刊 (2011).