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科研机构
北京大学 [12]
内容类型
期刊论文 [8]
其他 [4]
发表日期
2015 [3]
2013 [1]
2012 [1]
2010 [3]
2009 [2]
2006 [1]
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专题:北京大学
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Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
其他
2015-01-01
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Wang, Yijiao
;
Al-Ameri, Talib
;
Wang, Xingsheng
;
Georgiev, Vihar P.
;
Towie, Ewan
;
Amoroso, Salvatore Maria
;
Brown, Andrew R.
;
Cheng, Binjie
;
Reid, David
;
Riddet, Craig
;
Shifren, Lucian
;
Sinha, Saurabh
;
Yeric, Greg
;
Aitken, Robert
;
Liu, Xiaoyan
;
Kang, Jinfeng
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
electrostatics
nanowire transistors (NWs)
performance
quantum effects
TCAD
STATISTICAL VARIABILITY
INVERSION-LAYERS
GATE
CMOS
GENERATION
ELECTRON
DENSITY
FINFETS
DEVICES
MOSFETS
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
期刊论文
44th European Solid-State Device Research Conference (ESSDERC), 2015
Chang, Pengying
;
Liu, Xiaoyan
;
Zeng, Lang
;
Du, Gang
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
Surface orientation
Strain
Hole mobility
InSb
III-V semiconductor
Modeling
V COMPOUND SEMICONDUCTORS
DEFORMATION POTENTIALS
INVERSION-LAYERS
Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs
期刊论文
journal of computational and theoretical nanoscience, 2013
He, Jin
;
Xu, Yiwen
;
Chen, Lin
;
Zhang, Lining
;
Zhou, Xingye
;
Ma, Chenyue
;
Cao, Yu
;
Ye, Yun
;
Wang, Cheng
;
Liang, Hailang
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
DG MOSFETs
Mobility
Phonon Scattering
Surface Roughness Scattering
Symmetric and Asymmetric
Dependent and Independent
SI INVERSION-LAYERS
INTERFACE-ROUGHNESS DEPENDENCE
SURFACE-ROUGHNESS
LIMITED MOBILITY
VOLUME INVERSION
FIELD
PERFORMANCE
TRANSISTORS
DEVICE
CMOS
Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region
期刊论文
journal of computational and theoretical nanoscience, 2012
Chen, Yu
;
He, Jin
;
Liang, Hai Lang
;
Ma, Yong
;
Chen, Qin
;
Su, Yanmei
;
He, Hong Yu
;
Chan, Mansun
;
Cao, Juncheng
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/11/13
Terahertz Photomixer
HEMT
Analytical Model
Plasma Excitation
Two Dimensional Gas (2DEG)
FIELD-EFFECT TRANSISTOR
INVERSION-LAYERS
RADIATION
EMISSION
FLUID
MECHANISM
GAAS
A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
期刊论文
固体电子学, 2010
Wang, Yinglei
;
Yan, Zhifeng
;
Zhu, Jingxuan
;
Zhang, Lining
;
Lin, Xinnan
;
He, Jin
;
Cao, Juncheng
;
Chan, Mansun
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2015/11/10
Numerical model
Terahertz detection
Field-effect transistors
Sub-threshold
Strong inversion
2-DIMENSIONAL ELECTRON FLUID
CURRENT INSTABILITY
RESONANT DETECTION
INVERSION-LAYERS
DC CURRENT
A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors
期刊论文
应用物理杂志, 2010
Zhang, Jian
;
Zhang, Lining
;
He, Jin
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
DOUBLE-GATE MOSFETS
SOI MOSFETS
CIRCUIT SIMULATION
THRESHOLD VOLTAGE
INVERSION-LAYERS
VOLUME INVERSION
OPERATION MODES
COMPACT MODEL
BULK
PERFORMANCE
Study on Electron Mobility in Nanoscale DG MOSFETs with Symmetric, Asymmetric and Independent Operation Modes
其他
2010-01-01
Xu, Yiwen
;
Chen, Lin
;
Zhang, Lining
;
Zhou, Wang
;
He, Frank
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2015/11/16
SI INVERSION-LAYERS
SILICON-ON-INSULATOR
Numerical Simulation Study on Electron Mobility of Independent DG MOSFETs
其他
2009-01-01
Chen, Lin
;
Xu, Yiwen
;
Zhang, Lining
;
Zhou, Wang
;
He, Frank
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/12
SI INVERSION-LAYERS
SURFACE-ROUGHNESS
LIMITED MOBILITY
VOLUME INVERSION
GATE
FIELD
TRANSISTORS
INTERFACE
Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor
期刊论文
iete technical review, 2009
Chen, Yu
;
He, Jin
;
Wang, Yinglei
;
Lin, Xinnan
;
Zhang, Lining
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/16
MOS field-effect transistor
Nanowire device
Plasma wave
THz wave generation and detection
2-DIMENSIONAL ELECTRONIC FLUID
SURROUNDING-GATE MOSFETS
PLASMA-WAVES
RESONANT DETECTION
INVERSION-LAYERS
RADIATION
SUBTERAHERTZ
DESIGN
MODEL
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