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CORC

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Design of suppressing optical and recombination losses in ultrathin CuInGaSe2 solar cells by Voronoi nanocavity arrays 会议论文
作者:  Wang, Yi-Chung;  Chen, Chia-Wei;  Su, Teng-Yu;  Yang, Tzu-Yi;  Liu, Wen-Wu
收藏  |  浏览/下载：16/0  |  提交时间：2020/12/18
The Properties of Surface Passivated PbS Quantum Dots 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Chen, Chunlan;  Pu, Hongbin;  Yang, Yingxiang;  Wang, Min;  He, Xiaomin
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/20
Surface passivation of 1550nm AlxInyAsSb avalanche photodiode 会议论文
作者:  Guo, Chunyan;  Lv, Yuexi;  Zheng, Da'nong;  Sun, Yaoyao;  Jiang, Zhi
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/19
Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation 会议论文
作者:  Jiang, Huaxing;  Liu, Chao;  Lu, Xing;  Lau, Kei May
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26
Structural and electronic properties of SiC/AlN core/shell nanowires: A first-principles study 会议论文
成都, 2014-7-13
作者:  Yanru Zhang;  Junfeng Ren
收藏  |  浏览/下载：8/0  |  提交时间：2020/01/04
Surface passivation of undoped hematite nanorod arrays via aqueous solution growth for improved photoelectrochemical water splitting 会议论文
作者:  Shen, Shaohua;  Li, Mingtao;  Guo, Liejin;  Jiang, Jiangang;  Mao, Samuel S.
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/03
Investigation of single field-effect surface passivation by constructing electrolyte/Si solar cell structure 会议论文
International Conference on Optoelectronics and Microelectronics (ICOM), Changchun, PEOPLES R CHINA, 2012-01-01
作者:  Liu, W. F.;  Guan, J.;  Bian, J. M.;  Zhao, Y.;  Liu, Y. H.
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/13
High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Ning Y. Q.; Qin L.; Sun Y. F.; Li T.; Cui J. J.; Peng B.; Liu G. Y.; Zhang Y.; Liu Y.; Wang L. J.; Cui D. F.; Xu Z. Y.
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25
High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.  
Reduction of Cr(VI) by nanoscale zero valent iron (nZVI): The reaction kinetics (CPCI-S收录EI收录) 会议论文
2010 4th International Conference on Bioinformatics and Biomedical Engineering, iCBBE 2010, Chengdu, China, June 18, 2010 - June 20, 2010
作者:  Li, Xiaoqin[1];  Lei, Lei[1];  Yang, Chen[1];  Zhang, Wei-Xian[2]
收藏  |  浏览/下载：2/0  |  提交时间：2019/04/16

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