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Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes 会议论文
Shanghai, China, 2021-06-03
作者:  Wu, Shun-Hua;  Li, Te;  Wang, Dan;  Yu, Xue-Cheng;  Wang, Zhen-Fu
收藏  |  浏览/下载：69/0  |  提交时间：2022/01/21
Fast AVS to HEVC Transcoding via Visual Feature Extraction with Resolution Conversion 会议论文
International Conference on Signal Processing Proceedings, ICSP, 2018-08-12
作者:  Asfandyar, M.;  Aslam, A.;  Pervaiz, N.
收藏  |  浏览/下载：21/0  |  提交时间：2019/12/30
A review and correlations for two phase flow heat transfer in helically coiled tubes 会议论文
作者:  Ma, Haifu;  Gou, Junli
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/26
Model and control of diode-assisted buck-boost voltage source inverter 会议论文
作者:  Zhang, Yan;  Liu, Jinjun;  Ma, Xiaolong;  Feng, Junjie
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/03
Characteristics of triggered vacuum switch with single axial magnetic electrode for high frequency current interruption 会议论文
作者:  Pu, Lu;  Cao, Xiaolong;  Duan, Xiongying;  Cheng, Xian;  Liao, Minfu
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/10
Comparison of conventional dc-dc converter and a family of diode-assisted dc-dc converter 会议论文
作者:  Zhang, Yan;  Zhang, Chaoyi;  Liu, Jinjun;  Cheng, Yujie
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/10
Effect of lithium bis(oxalate)borate-based electrolyte on the performance of LiNi0.5Mn1.5O4 for high voltage lithium-ion batteries 会议论文
Shenzhen, China, March 23, 2012 - March 25, 2012
作者:  Li, Shiyou;  Zhao, Yangyu;  Zhao, Wei;  Cui, Xiaoling
收藏  |  浏览/下载：7/0  |  提交时间：2020/11/15
High beam quality 400W practical all-solid-state laser for laser beam texture 会议论文
High-Power Lasers and Applications V, Beijing, China, October 18, 2010 - October 19, 2010
作者:  Geng AC(耿爱丛);  Yang MJ(杨明江);  Zhao C;  Li BH
收藏  |  浏览/下载：15/0  |  提交时间：2017/06/20
A high efficiency current fed multi-resonant converter for high step-up power conversion in renewable energy harvesting 会议论文
作者:  Yuan, Bo;  Yang, Xu;  Li, Donghao
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/18
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.  

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