Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes

doi:10.1117/12.2602879

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 瞬态光学技术国家重点实验室

	Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes
	Wu, Shun-Hua 1,2; Li, Te 1; Wang, Dan 1; Yu, Xue-Cheng 1; Wang, Zhen-Fu 1; Liu, Guo-Jun 2
	2021
会议日期	2021-06-03
会议地点	Shanghai, China
关键词	885nm low loss asymmetric waveguide high power high power conversion efficiency
卷号	11907
DOI	10.1117/12.2602879
英文摘要	Aiming at the epitaxial structure of the high-power 885nm laser diodes, the factors limiting the further increase of the output power and the power conversion efficiency were investigated. According to the analysis, the epitaxial structure of the laser diodes was optimized, and the influence of the waveguide layer thickness on the carrier absorption loss and the series resistance was theoretically simulated. The results showed that the asymmetric waveguide structure with the thickness ratio of the N-side and the P-side of 6:4 can reduce the carrier absorption loss to the greatest extent. Based on the simulation results, the 885nm laser bars with the optimized epitaxial structure were fabricated and tested under the ambient temperature of 25 in a quasi-continuous wave mode of 250μs and 200Hz. The slope efficiency reaches 1.26W/A, while the series resistance is only 1.2mω. The power of 277.6W is achieved at 250A injection current and the maximum power conversion efficiency exceeds 64%. © 2021 SPIE.
产权排序	1
会议录	Sixteenth National Conference on Laser Technology and Optoelectronics
会议录出版者	SPIE
语种	英语
ISSN号	0277786X;1996756X
ISBN号	9781510646636
内容类型	会议论文
源URL	[http://ir.opt.ac.cn/handle/181661/95611]
专题	西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位	1.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Shannxi, Xi'an; 710119, China 2.State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Jilin, Changchun; 130022, China;
推荐引用方式 GB/T 7714	Wu, Shun-Hua,Li, Te,Wang, Dan,et al. Optimization of the epitaxial structure of low-loss 885nm high-power laser diodes[C]. 见:. Shanghai, China. 2021-06-03.