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科研机构
半导体研究所 [11]
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期刊论文 [11]
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2009 [1]
2008 [1]
2006 [2]
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半导体物理 [11]
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Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001
作者:
Hao GD
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浏览/下载:129/28
  |  
提交时间:2010/03/08
CONTINUOUS-WAVE OPERATION
QUANTUM-WELLS
LASER-DIODES
ORIENTATION
SEMICONDUCTORS
DEPENDENCE
ANISOTROPY
SEMIPOLAR
SAPPHIRE
FILMS
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
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浏览/下载:55/0
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提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content
期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH
;
Niu ZC
;
Zhang SY
;
Ni HQ
;
He ZH
;
Sun Z
;
Han Q
;
Wu RH
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  |  
浏览/下载:85/0
  |  
提交时间:2010/04/11
photoluminescence
molecular beam epitaxy
quantum wells
nitrides
semiconducting III-V materials
IMPROVED LUMINESCENCE EFFICIENCY
LASER-DIODES
TEMPERATURE
SURFACTANT
EMISSION
NITROGEN
ORIGIN
Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 117-120
Gao HY (Gao Haiyong)
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浏览/下载:32/0
  |  
提交时间:2010/04/11
GaN nanorods
Ga2O3/ZnO films
RF magnetron sputtering
nitridation
OPTICAL-PROPERTIES
LASER-DIODES
ZNO
SUBSTRATE
NANOWIRES
LAYER
Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process
期刊论文
ieee journal of quantum electronics, 2003, 卷号: 39, 期号: 6, 页码: 716-721
作者:
Yu LJ
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  |  
浏览/下载:32/0
  |  
提交时间:2010/08/12
Fourier transform method
gain measurement
optical spectrum analyzer (OSA)
semiconductor laser
EMISSION-SPECTRA
DIODES
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
期刊论文
applied physics letters, 2002, 卷号: 80, 期号: 20, 页码: 3769-3771
作者:
Xu B
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浏览/下载:89/3
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
HIGH-POWER
LASER-DIODES
NM
Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 310-314
Lu LW
;
Wang ZG
;
Yang CL
;
Wang J
;
Ma ZH
;
Sou IK
;
Ge WK
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  |  
浏览/下载:93/10
  |  
提交时间:2010/08/12
II-VI semiconductor
self-organized quantum dots
optical and electrical properties
TEMPERATURE-DEPENDENCE
WELL STRUCTURES
LASER-DIODES
PHOTOLUMINESCENCE
SPECTROSCOPY
EPILAYERS
SURFACE
STATES
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots
期刊论文
journal of applied physics, 2001, 卷号: 90, 期号: 4, 页码: 2048-2050
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:100/6
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
LASER-DIODES
PHOTOLUMINESCENCE
THRESHOLD
EMISSION
Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers
期刊论文
journal of applied physics, 1999, 卷号: 85, 期号: 3, 页码: 1775-1779
Zhu ZM
;
Li GH
;
Liu NZ
;
Wang SZ
;
Han HX
;
Wang ZP
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  |  
浏览/下载:23/0
  |  
提交时间:2010/08/12
P-TYPE ZNSE
MOLECULAR-BEAM EPITAXY
EXCITATION SPECTROSCOPY
LASER-DIODES
ACCEPTORS
GROWTH
A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode
期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 9a, 页码: 5096-5100
Chen B
;
Wang W
;
Wang XJ
;
Zhang JY
;
Fan Z
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  |  
浏览/下载:70/0
  |  
提交时间:2010/08/12
fiber communication
AlGaInAs/InP
distributed feedback laser diodes
complex-coupled grating
strained-compensated
LP-MOCVD
TEMPERATURE
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