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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A novel fast lock-in phase-locked loop frequency synthesizer with direct frequency presetting circuit 期刊论文 japanese journal of applied physics part 1-regular papers brief communications & review papers, 2006, 卷号: 45, 期号: 4b, 页码: 3290-3294 Kuang XF; Wu NJ; Shou GL 收藏  |  浏览/下载：64/0  |  提交时间：2010/04/11 lock-in speed  direct frequency presetting  mixed-signal voltage-controlled oscillator (VCO)  phase-locked loop (PLL)  synthesizer  LOW-NOISE  CMOS   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Metal-semiconductor-metal ultraviolet photodetector based on GaN 期刊论文 science in china series g-physics astronomy, 2003, 卷号: 46, 期号: 2, 页码: 198-203 Wang J; Zhao DA; Liu ZS; Feng G; Zhu JJ; Shen XM; Zhang BS; Yang H 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 GaN  MSM  ultraviolet photodetector  responsivity  LOW-NOISE  DETECTORS  PHOTODIODES  SI(111)  GAIN   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：129/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES   Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文 ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425 Ho WY; Surya C; Tong KY; Lu LW; Ge WK 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 current stressing  DLTS  flicker noise  heterojunctions  III-V nitride  LOW-FREQUENCY FLUCTUATIONS  RESONANT-TUNNELING DIODES  FLICKER NOISE  GALLIUM NITRIDE  1/F NOISE  DEVICES  TRANSISTORS  QUALITY