Studies of high DC current induced degradation in III-V nitride based heterojunctions

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	Studies of high DC current induced degradation in III-V nitride based heterojunctions
	Ho WY ; Surya C ; Tong KY ; Lu LW ; Ge WK
刊名	ieee transactions on electron devices
	2000
卷号	47 期号:7 页码:1421-1425
关键词	current stressing DLTS flicker noise heterojunctions III-V nitride LOW-FREQUENCY FLUCTUATIONS RESONANT-TUNNELING DIODES FLICKER NOISE GALLIUM NITRIDE 1/F NOISE DEVICES TRANSISTORS QUALITY
ISSN号	0018-9383
通讯作者	ho wy,hong kong polytech univ,dept elect engn,hong kong,hong kong,peoples r china.
中文摘要	we report experiments on high de current stressing in commercial iii-v nitride based heterojunction light-emitting diodes. stressing currents ranging from 100 ma to 200 ma were used. degradations in the device properties were investigated through detailed studies of the current-voltage (i-v) characteristics, electroluminescence, deep-level transient fourier spectroscopy and flicker noise. our experimental data demonstrated significant distortions in the i-v characteristics subsequent to electrical stressing. the room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. concentration of the deep-levels was examined by deep-level transient fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at e-1 = e-c - 1.1 ev. the result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. these traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including dlts. the two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12520]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ho WY,Surya C,Tong KY,et al. Studies of high DC current induced degradation in III-V nitride based heterojunctions[J]. ieee transactions on electron devices,2000,47(7):1421-1425.
APA	Ho WY,Surya C,Tong KY,Lu LW,&Ge WK.(2000).Studies of high DC current induced degradation in III-V nitride based heterojunctions.ieee transactions on electron devices,47(7),1421-1425.
MLA	Ho WY,et al."Studies of high DC current induced degradation in III-V nitride based heterojunctions".ieee transactions on electron devices 47.7(2000):1421-1425.