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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文 20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005 Shen, WJ; Duan, Y; Wang, J; Wang, QY; Zeng, YP 收藏  |  浏览/下载：97/18  |  提交时间：2010/03/29 ZnO  MOCVD  thermal annealing  photoluminescence  x-ray diffraction  atomic force microscopy  PULSED-LASER DEPOSITION  THIN-FILMS  PHOTOLUMINESCENCE  MECHANISMS  EPITAXY  CVD  SI   Epitaxial growth of SiC on complex substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载：23/0  |  提交时间：2010/11/15 X-ray diffraction  nitrides  semiconducting III-V materials  PHASE  FILMS   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 metalorganic chemical vapor deposition  cubic GaN  hexagonal phase content  4-circle X-ray double crystal diffraction  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  THIN-FILMS  SILICON  GAAS   Self-organization of the InGaAs GaAs quantum dots superlattice 会议论文 10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998 Zhuang QD; Li HX; Pan L; Li JM; Kong MY; Lin LY 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 X-RAY-DIFFRACTION  ISLANDS  SURFACES  GROWTH   Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers 会议论文 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 Zhuang QD; Li JM; Zeng YP; Pan L; Chen YH; Kong MY; Lin LY 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 InGaAs GaAs quantum dots  infrared absorption  self-organization  X-RAY-DIFFRACTION  ISLANDS  TRANSITIONS