Epitaxial growth of SiC on complex substrates

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	Epitaxial growth of SiC on complex substrates
	Sun GS ; Li JM ; Luo MC ; Zhu SR ; Wang L ; Zhang FF ; Lin LY
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	optical microscopy X-ray diffraction molecular beam epitaxy semiconducting silicon compounds SAPPHIRE DEPOSITION FILMS
页码	811-815
通讯作者	sun gs chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	epitaxial growth of sic on complex substrates was carried out at substrate temperature from 1200 degreesc to 1400 degreesc. three kinds of new complex substrates, c-plane sapphire, aln/sapphire, and gan/aln/sapphire, were used in this study. we obtained a growth rate in the range of 1-6 mum/h. thick (6 mum) sic epitaxial layers with no cracks were successfully obtained on aln/sapphire and gan/aln/sapphire substrates. x-ray diffraction patterns have confirmed that single-crystal sic was obtained on these complex substrates. analysis of optical transmission spectra of the sic grown on sapphire substrates shows the lowest-energy gap near 2.2 ev, which is the value for cubic sic. the undoped sic showed n-type electrical conductivity. (c) 2001 elsevier science b.v. all rights reserved.
英文摘要	epitaxial growth of sic on complex substrates was carried out at substrate temperature from 1200 degreesc to 1400 degreesc. three kinds of new complex substrates, c-plane sapphire, aln/sapphire, and gan/aln/sapphire, were used in this study. we obtained a growth rate in the range of 1-6 mum/h. thick (6 mum) sic epitaxial layers with no cracks were successfully obtained on aln/sapphire and gan/aln/sapphire substrates. x-ray diffraction patterns have confirmed that single-crystal sic was obtained on these complex substrates. analysis of optical transmission spectra of the sic grown on sapphire substrates shows the lowest-energy gap near 2.2 ev, which is the value for cubic sic. the undoped sic showed n-type electrical conductivity. (c) 2001 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:19导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:19z (gmt). no. of bitstreams: 1 2920.pdf: 201676 bytes, checksum: 5d07346c828983e32934f8189202a128 (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14949]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun GS,Li JM,Luo MC,et al. Epitaxial growth of SiC on complex substrates[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.