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Heterogeneous CFs induced unipolar and bipolar resistive switching behaviors in InGaZnO thin films 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 767, 页码: 1057-1063
作者:  Li, Qin;  Gao, Leiwen;  Li, Yanhuai;  Song, Zhongxiao
收藏  |  浏览/下载:7/0  |  提交时间:2019/11/26
Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.
收藏  |  浏览/下载:5/0  |  提交时间:2019/11/21
Low leakage current resistive memory based on Bi-1.10 (Fe0.95Mn0.05) O-3 films 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: Vol.33 No.9
作者:  Li, Zhen;  Yang, Zhengchun;  Wu, Jiagang;  Zhou, Baozeng;  Bao, Qiwen
收藏  |  浏览/下载:3/0  |  提交时间:2019/02/25
Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects 期刊论文
ADVANCED MATERIALS, 2018, 卷号: 30, 期号: 14
作者:  Zhao, Xiaolong;  Ma, Jun;  Xiao, Xiangheng;  Liu, Qi;  Shao, Lin
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/05
Characteristics of the bipolar resistive switching behavior in memory device with Au/ZnO/ITO structure 期刊论文
CHINESE JOURNAL OF PHYSICS, 2018, 卷号: 56, 期号: 6
作者:  Wang, Hongjun;  Zhu, Yuanyuan;  Liu, Yong
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05
Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1-xBixI3 Perovskite-Based Memory Device 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 页码: 24620-24626
作者:  Ge, Shuaipeng;  Wang, Yuhang;  Xiang, Zhongcheng;  Cui, Yimin
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/30
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.
收藏  |  浏览/下载:8/0  |  提交时间:2019/09/17


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