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科研机构
半导体研究所 [2]
兰州大学 [1]
内容类型
期刊论文 [2]
会议论文 [1]
发表日期
2011 [3]
学科主题
半导体物理 [2]
atomic and... [1]
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发表日期:2011
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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
收藏
  |  
浏览/下载:76/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Thermal stability of Cu/Si (111) films prepared by ionized cluster beam technique
会议论文
2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011, Sanya, China, July 29, 2011 - July 31, 2011
作者:
Cao, Bo
;
Jia, Yanhui
;
Li, Gongping
;
Cho, Seong Jin
;
Kim, Hee
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浏览/下载:3/0
  |  
提交时间:2017/01/20
Film preparation
Annealing
Backscattering
Copper
Diffraction
Diffusion
Ionization
Ions
Metallic films
Rutherford backscattering spectroscopy
Silicides
Silicon
Spectrometry
Thermodynamic stability
X ray diffraction
Annealing temperatures
Atomic diffusions
Cu films
Interface reaction
Interface reactions
Ionized cluster beam (ICB)
Ionized cluster beams
P-type Si
Rutherford backscattering spectrometry
Rutherford backscattering spectrometry (RBS)
Si atoms
Si substrates
Thermally stable
X-ray diffraction (XRD)
XRD
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