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长春光学精密机械与物... [3]
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会议论文 [3]
发表日期
2008 [3]
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发表日期:2008
专题:长春光学精密机械与物理研究所
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Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE)
会议论文
Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China
Yan C.
;
He C.
;
Lu G.
;
Qin L.
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浏览/下载:17/0
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提交时间:2013/03/25
By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current
efficiency
emission wavelength
and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived
and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time
the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results
it is shown that the device can still operate at high temperature condition.
Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Yan C.
;
He C.
;
Lu G.
;
Qin L.
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浏览/下载:17/0
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提交时间:2013/03/25
Firstly
the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given
and the output characteristic was simple calculated. Then
in experiment
the VECSELs were grown
bonded on to the heat sink
and optically pumped by high-power 808nm diode laser array with fiber output module
the light emission spectra were measured. Finally
The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.
Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Liang X.
;
Qin L.
;
He C.
;
Ma Q.
;
Ning Y.
;
Wang L.
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浏览/下载:17/0
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提交时间:2013/03/25
Temperature characteristics of several familiar high power diode lasers with broad area
whose wavelength was separately 808 nm
810 nm
940 nm and 980 nm
were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures
different structures were attempted. For the 808 nm structure
we tried different barrier thicknesses. For the 810 nm structure
different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper
the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.
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