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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2008    内容类型：会议论文    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High power diode laser with beam coupling (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Gu Y.; Wang L.; Feng G.; Shan X.; Yin H.; Liu Y. 收藏  |  浏览/下载：52/0  |  提交时间：2013/03/25 As the increasing applications of the semiconductor lasers in the laser processing  the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness  and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper  it mainly introduces the beam shaping and the technology of spatial coupling  polarization coupling  and wavelength coupling. The coupling key elements are presented and indicated. Finally  the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase  which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling  the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.   Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China Yan C.; He C.; Lu G.; Qin L. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current  efficiency  emission wavelength  and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived  and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time  the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results  it is shown that the device can still operate at high temperature condition.   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.   Annular sub-aperture stitching interferometry for testing of large asphreical surfaces (EI CONFERENCE) 会议论文 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China Wang X.-K.; Wang L.-H.; Zheng L.-G.; Deng W.-J.; Zhang X.-J. 收藏  |  浏览/下载：67/0  |  提交时间：2013/03/25 Annular subaperture stitching interferometric technology can test large-aperture  and the PV and RMS of residual error of the full aperture phase distribution is 0.027 and 0.0023  high numerical aperture aspheric surfaces with high resolution  the relative error of PV and RMS is -0.53% and -0.31%  respectively. The results conclude that this splicing model and algorithm are accurate and feasible. So it provides another quantitive measurement for test aspheric surfaces especially for large aperture aspheres besides null-compensation.  low cost and high efficiency without auxiliary null optics. In this paper  the basic principle and theory of the stitching method are introduced  the reasonable mathematical model and effective splicing algorithm are established based on simultaneous least-squares method and Zernike polynomial fitting. The translation errors are eliminated from each subaperture through the synthetical optimization stitching mode  it keeps the error from transmitting and accumulating. The numerical simulations have been carried on by this method. As results  the surface map of the full aperture after stitching is consistent to the input surface map  the difference of PV error and RMS error between them is -0.0074 and -0.00052 ( is 632.8nm)  respectively   Design of optical elements for imaging the earth's plasmasphere (EI CONFERENCE) 会议论文 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China Wang L.-H.; Wang X.-K.; Chen B. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 Studying the distribution of He+ in Earth's plasmasphere by detecting its resonantly-scattered emission at 304A will record the structure and dynamics of the cold plasma in Earth's plasmasphere on a global scale. EUV imaging systems usually utilizes near normal incidence optics including multilayer mirror and filter. In this paper  the space condition of the Earth's plasmasphere to confirm the expected performance of mirror and filter for this task were analyzed and some guidelines for the design of the optical elements were introduced. In order to achieve higher response at 304A and reduce 584A radiation for the optical system  a new multilayer coating of Mo/Si with UOx (x=2-3) was developed  and it is indicated that promising filter material is Al/C with a nickel mesh. In addition  we compute the reflectance of multilayer mirror based on optical constants and the transmission of the filter based on atomic scattering factor. The results show the multilayer mirror has high reflectance of 26.27% at 304 Aand low reflectance of 0.60% at 584A. Finally  the conversion efficiency of mirror coupled with filter is 6.88% at 304A and 0.01% at 584 A.