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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2008    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The growth temperatures dependence of optical and electrical properties of InN films 期刊论文 science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242 Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG 收藏  |  浏览/下载：50/2  |  提交时间：2010/03/08 metalorganic chemical vapor deposition  X-ray diffraction  photoluminescence   Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文 journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645 Wei, XC; Zhao, YW; Dong, ZY; Li, JM 收藏  |  浏览/下载：53/0  |  提交时间：2010/03/08 defects  X-ray diffraction  growth from vapor  oxides  semiconducting II-VI materials   Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition 期刊论文 thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928 Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL 收藏  |  浏览/下载：32/3  |  提交时间：2010/03/08 X-ray diffraction  metal-organic chemical vapor deposition  zinc oxide  structural properties   Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107 Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏  |  浏览/下载：234/42  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  indium compounds  interface states  semiconductor heterojunctions  silicon compounds  valence bands  wide band gap semiconductors  X-ray photoelectron spectra