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Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes 期刊论文
OPTICS EXPRESS, 2021, 卷号: 29, 期号: 21, 页码: 33992-34001
作者:  Hou, Yufei;   Zhao, Degang;   Chen, Ping;   Liang, Feng;   Liu, Zongshun;   Yang, Jing
收藏  |  浏览/下载：12/0  |  提交时间：2022/03/28
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 130, 期号: 17, 页码: 173105
作者:  Yang, J.;   Wang, B. B.;   Zhao, D. G.;   Liu, Z. S.;   Liang, F.;   Chen, P.;   Zhang, Y. H.;   Zhang, Z. Z.
收藏  |  浏览/下载：11/0  |  提交时间：2022/03/24
The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties 期刊论文
NANOSCALE RESEARCH LETTERS, 2021, 卷号: 16, 期号: 1, 页码: 161
作者:  Ben, Yuhao;   Liang, Feng;   Zhao, Degang;   Yang, Jing;   Liu, Zongshun;   Chen, Ping
收藏  |  浏览/下载：17/0  |  提交时间：2022/03/24
The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes 期刊论文
APPLIED SURFACE SCIENCE, 2021, 卷号: 570, 页码: 151132
作者:  Wang, Xiao-Wei;   Liang, Feng;   Zhao, De-Gang;   Chen, Ping;   Liu, Zong-Shun;   Yang, Jing
收藏  |  浏览/下载：16/0  |  提交时间：2022/03/23
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment 期刊论文
RESULTS IN PHYSICS, 2021, 卷号: 31, 页码: 105057
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Liu, Zongshun;   Chen, Ping;   Yang, Jing
收藏  |  浏览/下载：13/0  |  提交时间：2022/03/23
Excitonic effects on electron spin orientation and relaxation in wurtzite GaN 期刊论文
PHYSICAL REVIEW B, 2021, 卷号: 104, 期号: 12, 页码: 125202
作者:  Zhang, Shixiong;   Tang, Ning;   Zhang, Xiaoyue;   Liu, Xingchen;   Guan, Hongming;   Zhang, Yunfan;   Qian, Xuan;   Ji, Yang;   Ge, Weikun;   Shen, Bo
收藏  |  浏览/下载：41/0  |  提交时间：2022/03/28
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 874, 页码: 159851
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun
收藏  |  浏览/下载：27/0  |  提交时间：2022/03/28
The influence of residual GaN on two-step-grown GaN on sapphire 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 期号: 135, 页码: 105903
作者:  Peng, Liyuan;   Liu, Shuangtao;   Yang, Jing;   Zhao, Degang;   Liang, Feng;   Chen, Ping;   Liu, Zongshun
收藏  |  浏览/下载：21/0  |  提交时间：2022/03/24
Metal-Assisted Chemical Etching for Anisotropic Deep Trenching of GaN Array 期刊论文
NANOMATERIALS, 2021, 卷号: 11, 期号: 12, 页码: 3179
作者:  Wang, Qi;   Zhou, Kehong;   Zhao, Shuai;   Yang, Wen;   Zhang, Hongsheng;   Yan, Wensheng;   Huang, Yi;   Yuan, Guodong
收藏  |  浏览/下载：21/0  |  提交时间：2022/03/23
The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes 期刊论文
ELECTRONICS, 2020, 卷号: 9, 期号: 2, 页码: 282
作者:  Xiuxia Yang;  Zhe Cheng;  Zhiguo Yu;  Lifang Jia;  Lian Zhang;  Yun Zhang
收藏  |  浏览/下载：13/0  |  提交时间：2021/11/26

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