The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties

	The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties
	Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping
刊名	NANOSCALE RESEARCH LETTERS
	2021
卷号	16 期号:1 页码:161
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30812]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping. The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties[J]. NANOSCALE RESEARCH LETTERS,2021,16(1):161.
APA	Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping.(2021).The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties.NANOSCALE RESEARCH LETTERS,16(1),161.
MLA	Ben, Yuhao; Liang, Feng; Zhao, Degang; Yang, Jing; Liu, Zongshun; Chen, Ping."The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties".NANOSCALE RESEARCH LETTERS 16.1(2021):161.