QQ客服 官方微博 反馈留言

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots 期刊论文 scientific reports, 2016, 卷号: 6, 页码: 35217 Hongjian Li; Panpan Li; Junjie Kang; Jiianfeng Ding; Jun Ma; Yiyun Zhang; Xiaoyan Yi; Guohong Wang 收藏  |  浏览/下载：37/0  |  提交时间：2017/03/16 Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance 期刊论文 ieee photonics technology letters, 2015, 卷号: 27, 期号: 19, 页码: 2004-2006 Panpan Li; Hongjian Li; Yongbing Zhao; Junjie Kang; Zhicong Li; Zhiqiang Liu; Xiaoyan Yi; Jinmin Li; Guohong Wang 收藏  |  浏览/下载：9/0  |  提交时间：2016/04/15 High Quantum Efficiency and Low Droop of 400-nm InGaN Near-Ultraviolet Light-Emitting Diodes Through Suppressed Leakage Current 期刊论文 ieee journal of quantum electronics, 2015, 卷号: 51, 期号: 9, 页码: 3300605 Panpan Li; Hongjian Li; Liancheng Wang; Xiaoyan Yi; Guohong Wang 收藏  |  浏览/下载：17/0  |  提交时间：2016/04/15 Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes 期刊论文 journal of applied physics, 2015, 卷号: 117, 页码: 073101 Panpan Li; Hongjian Li; Zhi Li; Junjie Kang; Xiaoyan Yi; Jinmin Li; Guohong Wang 收藏  |  浏览/下载：10/0  |  提交时间：2016/04/15 Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer 期刊论文 applied physics letters, 2013, 卷号: 102, 期号: 1, 页码: 011105 Li, Hongjian; Kang, Junjie; Li, Panpan; Ma, Jun; Wang, Hui; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong 收藏  |  浏览/下载：12/0  |  提交时间：2013/10/08 Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well 期刊论文 applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 052102 Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Li, Jinmin; Wang, Guohong 收藏  |  浏览/下载：14/0  |  提交时间：2013/08/27 Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes 期刊论文 appl. phys. express, 2013, 卷号: 6, 期号: 10, 页码: 102103 Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Zhicong Li, Jing Li, Xiaoyan Yi, and Guohong Wang 收藏  |  浏览/下载：13/0  |  提交时间：2014/04/09 Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization 期刊论文 applied physics express, 2013, 卷号: 6, 期号: 9, 页码: 092101 Hongjian Li, Panpan Li, Junjie Kang, Zhi Li, Yiyun Zhang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi and Guohong Wang 收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09 Low threading dislocation density in GaN films grown on patterned sapphire substrates 期刊论文 journal of semiconductors, 2012, 卷号: 33, 期号: 11, 页码: 113002 Liang, Meng; Wang, Guohong; Li, Hongjian; Li, Zhicong; Yao, Ran; Wang, Bing; Li, Panpan; Li, Jing; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin 收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07 Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文 ieee international conference on group iv photonics gfp, 2011, 卷号: 32, 期号: 11, 页码: 114007 Li, Zhicong; Li, Panpan; Wang, Bing; Li, Hongjian; Liang, Meng; Yao, Ran; Li, Jing; Deng, Yuanming; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14 Diodes  Electrostatic devices  Electrostatic discharge  Gallium alloys  Gallium nitride  Light emission