CORC

浏览/检索结果: 共12条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
Structural strain in single layer graphene fabricated on SiC 会议论文
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, September 2, 2018 - September 6, 2018
作者:  Yu, Wancheng;  Chen, Xiufang;  Hu, Xiaobo;  Xu, Xiangang;  Jin, Peng
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/31
Growth and electrical characterization of Al-N Co-doping SiC single crystals 期刊论文
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017, 2018, 卷号: 2018-January, 页码: 136-139
作者:  Xie, Xuejian;  Chen, Xiufang;  Peng, Yan;  Hu, Xiaobo;  Xu, Xiangang
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/11
Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods 期刊论文
CRYSTENGCOMM, 2018, 卷号: 20, 期号: 43, 页码: 6957-6962
作者:  Yang, Xianglong;  Yu, Jinying;  Chen, Xiufang;  Peng, Yan;  Hu, Xiaobo
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/11
High mobility and large domain decoupled epitaxial graphene on SiC (0001¯) surface obtained by nearly balanced hydrogen etching 期刊论文
Materials Letters, 2017, 卷号: 195, 页码: 82-85
作者:  Zhang, Fusheng;  Chen, Xiufang;  Yu, Cancan;  Xu, Xiangang;  Hu, Xiaobo
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/12
High mobility and large domain decoupled epitaxial graphene on SiC (000(1)over-bar) surface obtained by nearly balanced hydrogen etching 期刊论文
MATERIALS LETTERS, 2017, 卷号: 195, 页码: 82-85
作者:  Zhang, Fusheng;  Chen, Xiufang;  Yu, Cancan;  Xu, Xiangang;  Hu, Xiaobo
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/12
Reduction of dislocation density of sic crystals grown on seeds after h2etching 会议论文
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, September 25, 2016 - September 29, 2016
作者:  Chen, Xiufang;  Zhang, Fusheng;  Yang, Xianglong;  Peng, Yan;  Xie, Xuejian
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/31
Raman Analysis of Phonon Lifetimes in 4H-SiC and Their Doping Dependence 会议论文
13th China International Forum on Solid State Lighting / International Forum on Wide Bandgap Semiconductors China (SSLChina - IFWS), NOV 15-17, 2016
作者:  Xie, Xuejian;  Peng, Yan;  Yang, Xianglong;  Chen, Xiufang;  Hu, Xiaobo
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/31
Raman analysis of phonon lifetimes in 4H-SiC and their doping dependence 会议论文
2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016, November 15, 2016 - November 17, 2016
作者:  Xie, Xuejian;  Peng, Yan;  Yang, Xianglong;  Chen, Xiufang;  Hu, Xiaobo
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/31
Theoretical investigation on Surface Kinetics of the SiC Single Crystal Growth 会议论文
13th China International Forum on Solid State Lighting / International Forum on Wide Bandgap Semiconductors China (SSLChina - IFWS), NOV 15-17, 2016
作者:  Peng Yan;  Yang Xianglong;  Chen Xiufang;  Hu Xiaobo;  Xu Xiangang
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/31
Theoretical investigation on surface kinetics of the SiC single crystal growth 会议论文
2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016, November 15, 2016 - November 17, 2016
作者:  Yan, Peng;  Xianglong, Yang;  Xiufang, Chen;  Xiaobo, Hu;  Xiangang, Xu
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/31


©版权所有 ©2017 CSpace - Powered by CSpace