| Reduction of dislocation density of sic crystals grown on seeds after h2etching | |
| Chen, Xiufang; Zhang, Fusheng; Yang, Xianglong; Peng, Yan; Xie, Xuejian; Li, Tian; Hu, Xiaobo; Xu, Xiangang; Li, Guanglei; Wang, Ruiqi | |
| 2017 | |
| 会议名称 | 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 |
| 会议日期 | September 25, 2016 - September 29, 2016 |
| 卷号 | 897 MSF |
| DOI | 10.4028/www.scientific.net/MSF.897.19 |
| 页码 | 19-23 |
| 收录类别 | EI |
| 会议录 | Materials Science Forum
 |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6029466 |
| 专题 | 山东大学 |
| 作者单位 | State Key Laboratory of Crystal Materia |
| 推荐引用方式 GB/T 7714 | Chen, Xiufang,Zhang, Fusheng,Yang, Xianglong,et al. Reduction of dislocation density of sic crystals grown on seeds after h2etching[C]. 见:11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. September 25, 2016 - September 29, 2016. |
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