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Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 5, 页码: 52105
Ren, K; Rao, F; Song, ZT; Lv, SL; Cheng, Y; Wu, LC; Peng, C; Zhou, XL; Xia, MJ; Liu, B; Feng, SL
收藏  |  浏览/下载:22/0  |  提交时间:2013/04/17
Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 12, 页码: 122101
Zhu, M; Wu, LC; Song, ZT; Rao, F; Cai, DL; Peng, C; Zhou, XL; Ren, K; Song, SN; Liu, B; Feng, SL
收藏  |  浏览/下载:29/0  |  提交时间:2013/04/17
Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 14, 页码: 142104
Zhou, XL; Wu, LC; Song, ZT; Rao, F; Zhu, M; Peng, C; Yao, DN; Song, SN; Liu, B; Feng, SL
收藏  |  浏览/下载:21/0  |  提交时间:2013/04/17
Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application 期刊论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 卷号: 358, 期号: 17, 页码: 2409-2411
Wu, LC; Zhu, M; Song, ZT; Lv, SL; Zhou, XL; Peng, C; Rao, F; Song, SN; Liu, B; Feng, SL
收藏  |  浏览/下载:15/0  |  提交时间:2013/04/17
W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 12, 页码: 122108
Peng, C; Wu, LC; Rao, F; Song, ZT; Yang, PX; Song, HJ; Ren, K; Zhou, XL; Zhu, M; Liu, B; Chu, JH
收藏  |  浏览/下载:13/0  |  提交时间:2013/04/17
Germanium Nitride as a Buffer Layer for Phase Change Memory 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 10, 页码: 107201
Zhang, X; Liu, B; Peng, C; Rao, F; Zhou, XL; Song, SN; Wang, LY; Cheng, Y; Wu, LC; Yao, DN; Song, ZT; Feng, SL
收藏  |  浏览/下载:31/0  |  提交时间:2013/04/17
N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory 期刊论文
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 卷号: 15, 期号: 4, 页码: H101-H104
Peng, C; Yang, PX; Wu, LC; Song, ZT; Rao, F; Xu, JA; Zhou, XL; Zhu, M; Liu, B; Chu, JH
收藏  |  浏览/下载:11/0  |  提交时间:2013/04/17
High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material 期刊论文
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 卷号: 15, 期号: 3, 页码: H59-H61
Xu, JA; Rao, F; Song, ZT; Xia, MJ; Peng, C; Gu, YF; Zhu, M; Wu, LC; Liu, B; Feng, SL
收藏  |  浏览/下载:8/0  |  提交时间:2013/04/17
Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memory application 期刊论文
MATERIALS LETTERS, 2012, 卷号: 71, 页码: 98-100
Cheng, LM; Wu, LC; Song, ZT; Rao, F; Peng, C; Yao, DN; Liu, B
收藏  |  浏览/下载:13/0  |  提交时间:2013/04/17
Advantages of GeTeN material for phase change memory applications 期刊论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 卷号: 358, 期号: 17, 页码: 2416-2419
Peng, C; Wu, LC; Song, ZT; Zhou, XL; Zhu, M; Rao, F; Liu, B; Feng, SL
收藏  |  浏览/下载:9/0  |  提交时间:2013/04/17


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